Project/Area Number |
24656023
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
Allocation Type | Single-year Grants |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | National Institute for Materials Science |
Principal Investigator |
MORIYAMA Satoshi 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (00415324)
|
Project Period (FY) |
2012-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
|
Keywords | グラフェン / 量子ドット / ディラック電子系 |
Research Abstract |
Graphene consists of a single layer of carbon atoms and its quantum-dot (QD) devices are of significant research interest. In most previous attempts to fabricate such devices, the structures were etched from a graphene sheet by lithography, and the resulting devices consisted of QDs and small constrictions connected to the lead parts. Therefore, transport properties of graphene QD or nanoribbon devices are often dominated by edge roughness and disorder. To address this situation, we propose a new device structure, in which graphene nanostructures are isolated and metallic contacts are directly deposited onto them without constrictions. We demonstrate that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene sheet, which indicates the quantum confinement-deconfinement transition switched by a magnetic field. This demonstration constitutes important advances to control single Dirac fermions in graphene electronics.
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