Controlling of Single Photon Source in Silicon Carbide

• Project/Area Number: 24656025
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: OHSHIMA Takeshi 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究主幹 (50354949)
• Co-Investigator(Kenkyū-buntansha): UMEDA Takehide 筑波大学, 数理物質科学研究科(系), 准教授 (10361354)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000); Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 炭化ケイ素 / 欠陥エンジニアリング / スピン / 新機能材料 / 量子コンピューティング / 単一光源欠陥中心

Research Abstract

In order to find new defects which act as single photon sources in Silicon Carbide (SiC), semi-insulating SiC wafers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a results, in addition to luminescence from Si vacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm were observed even at room temperature. By the photo luminescence measurements at low temperature, it was concluded that the origin of those luminescence is positively charged carbon antisite – carbon vacancy pair (CsiVc). Also, it was revealed from antibunching measurements using a confocal microscope that CsiVc act as single photon source in SiC.

Research Products

• [Journal Article] A silicon Carbide Room-Temperature Single-Photon Source (2014)
  • Author(s): S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima
  • Journal Title: Nature Materials Volume: 13 Issue: 2 Pages: 151-156
  • DOI: 10.1038/nmat3806
  • Peer Reviewed
• [Journal Article] Fabrication of Single Photon Centres in Silicon Carbide (2012)
  • Author(s): B. C. Johnson, S. Castelletto, T. Ohshima. T. Umeda
  • Journal Title: IEEE conference publication, Proceedings of 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) Volume: 1 Pages: 217-218
  • DOI: 10.1109/commad.2012.6472328
  • Peer Reviewed
• [Presentation] Optically Active Defect Centres in Silicon Carbide Devices (2014)
  • Author(s): B.C. Johnson, N. Iwamoto, S. Castelletto, S. Onoda, T. Ohshima, T. Karle and J. C. McCallum
  • Organizer: 2014 Internat. Conf. on Nanoscience and Nanotechnology
  • Place of Presentation: Adelaide Convention Centre (Adelaide, Australia)
• [Presentation] Optically Active Defect Centres in Silicon Carbide Devices (2014)
  • Author(s): B.C. Johnson, N. Iwamoto, S. Castelletto, S. Onoda, T. Ohshima, T. Karle and J. C. McCallum
  • Organizer: 2014 International Conference on Nanoscience and Nanotechnology
  • Place of Presentation: Adelaide Convention Centre (Adelaide, Australia)
• [Presentation] Fabrication of Single Photon Centres in Silicon Carbide (2012)
  • Author(s): B. C. Johnson, S. Castelletto, T. Ohshima and T. Umeda
  • Organizer: 2012 Conference on Optoelectronic and Microelectronic Materials and Devices
  • Place of Presentation: Univ. of Melbourne (Melbourne, Australia)
• [Presentation] Fabrication of Single Photon Centres in Silicon Carbide (2012)
  • Author(s): B. C. Johnson, S. Castelletto, T. Ohshima and T. Umeda
  • Organizer: 2012 Conference on Optoelectronic and Microelectronic Materials and Devices
  • Place of Presentation: University of Melbourne (Melbourne, Australia)
• [Remarks]
  • URL: http://www.taka.jaea.go.jp/eimr_div/RadEffects/index_j.html