| Project/Area Number |
24656032
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagaoka University of Technology |
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Principal Investigator |
YASUI Kanji 長岡技術科学大学, 工学部, 教授 (70126481)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 薄膜 / 触媒反応 / 窒化物半導体 |
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| Research Abstract |
This research was carried out to establish a new CVD method diverted from hydrazine thruster technique. The preparations of zirconia catalyst dispersed with Ru nanoparticles and complex catalyst comprised of porous Ir fibers dispersed with the Ru nanoparticles were tried. Although the preparation of the zirconia catalyst dispersed with Ru nanoparticles was successful, the preparation of the complex catalyst was unsuccessful. By the supply of hydrazine gas with pulse mode to the Ru nanoparticle dispersed zirconia catalyst, stable exothermic reaction took place, and high-temperature nitrogen precursors were generated. GaN epitaxial films were grown on c-plane sapphire substrates at 600 degree C using the high-energy GaN precursors generated by a reaction between the high-temperature nitrogen precursors and trimethylgallium. The GaN film exhibited a sharp bandedge emission at 364 nm, although a broad emission peak was also observed at 600 nm.
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