| Project/Area Number |
24656051
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied optics/Quantum optical engineering
|
|---|
| Research Institution | The University of Tokushima |
|---|
Principal Investigator |
ISU TOSHIRO 徳島大学, ソシオテクノサイエンス研究部, 特任教授 (00379546)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KITADA Takahiro 徳島大学, 大学院ソシオテクノサイエンス研究部, 特任准教授 (90283738)
MORITA Ken 千葉大学, 大学院工学研究科, 准教授 (30448344)
|
|---|
| Project Period (FY) |
2012-04-01 – 2014-03-31
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
|
|---|
| Keywords | 半導体レーザ / 面発光 / 化合物半導体多層膜 / MBE,エピタキシャル成長 / 量子ドット / 二波長発光 / 結合共振器構造 / ウエハ接合 |
|---|
| Research Abstract |
In order to realize a terahertz light emitting semiconductor device, we investigated a two-color surface-emitting-laser-diode with a semiconductor-multilayer coupled-cavity. We obtained high quality InAs quantum-dots in an InGaAs quantum well on a GaAs(001) substrate which have a broad gain spectrum covering two color emission around 1.3um. We also fabricated coupled-cavity structures by wafer bonding with a GaAs(113)B substrate which has the second order nonlinear effects. Properties of emission from the coupled cavity structure were characterized, and two-color lasing by optical pumping was demonstrated. We also developed the device structure and process technologies for two-color lasing by current injection.
|
