| Project/Area Number |
24656103
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
YASUTAKE Kiyoshi 大阪大学, 工学(系)研究科(研究院), 教授 (80166503)
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| Co-Investigator(Kenkyū-buntansha) |
KAKIUCHI Hiroaki 大阪大学, 大学院工学研究科, 准教授 (10233660)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | シリコン / 水素還元 / 二酸化ケイ素 / プラズマエッチング / 高圧力プラズマ / SiO2 / 珪砂 / 太陽電池級Si |
|---|
| Outline of Final Research Achievements |
For the formation of SiH4 gas directly from the low-purity quartz sand (SiO2), we have developed elemental technologies for high-rate etching of SiO2 using high-pressure hydrogen plasma. Based on the newly-developed method for measuring atomic H density, we have clarified the essential relationships among the plasma condition, H density and SiO2 etching rate. By optimizing the plasma condition, we have achieved a record-high etching rate of SiO2 by hydrogen plasma (303 nm/min), which is about 100 times faster than the previously reported value.
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