| Project/Area Number |
24656196
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SATO Taketomo 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 半導体ナノワイヤ / 多孔質構造 / GaN / InGaN / プラズマ支援分子線エピタキシー / 選択成長 / 光支援電気化学エッチング / 光電極 / プラズマ支援分子線エピタキシー法 |
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| Research Abstract |
To explore novel materials for photochemical water splitting, we attempted the fabrication of GaN-based nanostructuers and their characterization of electrochemical properties. Growth of GaN and InGaN nanostructures were attempted by selective-area growth using RF-plasma-assisted molecular beam epitaxy. Hexagonal pyramidal structures of GaN were successfully fabricated and a use of alternate mask material for selective-area growth was suggested to be important to realized nanowires which is suitable for water splitting. We also investigated the photo-electrochemical properties of GaN by measureing current-voltage characteristics of GaN in electroryte with and without light irradiation. Furthermore, their characteristics was compared with porous structures, which were fabricated by photo-assisted chemial etching and had high-denstiy nanometer-sized pores on the surface, and it was found that porous structures allowed much lager photocurrent as compared to planar structures.
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