| Project/Area Number |
24656200
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TORIUMI AKIRA 東京大学, 工学(系)研究科(研究院), 教授 (50323530)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 遷移金属酸化物 / TiO2 / HFO2 / FET / VO2 / 金属・絶縁体転移 / 移動度 / 酸化物 / TFT / HFO |
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| Research Abstract |
We have achieved electron field effect mobility higher than 10 cm2/Vsec in TiO2 FETs with perfectly cut-off characteristics. In addition, we have observed characteristic enhancement of the photo-conductivity, which has a peak below 1 eV from the TiO2 conduction band edge. The high mobility is directly related to the reduction of characteristic peak. Both are controlled by the annealing condition, particularly ambient. Concerning VO2, it was epitaxially grown on single crystalline TiO2, and VO2 film shows uniform film characteristics without any cracks in case that the thickness is thinner than 10 nm. Furthermore, we found that HfO2 which was grown by Ar-sputtering included a huge amount of Ar inside HfO2, and that Ar had a specific effect on the structural phase transition of HfO2 at a high temperature.
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