| Project/Area Number |
24656201
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
ODA Shunri 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (50126314)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KODERA Tetsuo 東京工業大学, 量子ナノエレクトロニクス, 助教 (00466856)
|
|---|
| Project Period (FY) |
2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
|
|---|
| Keywords | 薄膜 / 量子構造 / DNAオリガミ / UVオゾン処理 / 非接触AFM / ナノデバイス / 単電子デバイス / 微細パターン形成 |
|---|
| Research Abstract |
DNA Origami technology is promising for the fabrication of nanoscale integrated devices, in which conventional lithography methods would face limitation. We studied formation of DNA Origami pattern on Si substrate and clarified that surface condition of Si substrate played a very important role. We found UV ozone treatment was effective to form DNA Origami pattern as designed. We also fabricated and characterized an integrated device of coupled quantum dots and an single electron transistor.
|
