| Project/Area Number |
24656202
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
HATANO Mutsuko 東京工業大学, 理工学研究科, 教授 (00417007)
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| Co-Investigator(Kenkyū-buntansha) |
IWASAKI Takayuki 東京工業大学, 大学院理工学研究科, 助教 (80454031)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | グラフェン / 低消費電力デバイス / 化学修飾グラフェン |
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| Research Abstract |
Fluorinated graphene has the possibility to achieve high-speed and low-power consumption devices. We propose a highly controlled fluorination method utilizing fluorine radicals in Ar/F2 plasma. Onset of transition from insulating to metallic conduction is observed in dilute fluorinated graphene. Highly fluorinated graphene shows electron-hole asymmetry in transport properties and local resistivity maximum at the hole conduction region, which are presumably caused by the existence of resonant fluorine impurities. Drastic change of the asymmetric feature occurs after removing fluorine atoms and creating structural defects by thermal annealing. These results suggest that the type of impurities or defects in graphene is detectable by examining asymmetry in transport properties. Moreover, fluorinated graphene FETs with ionic liquid gating were fabricated and lower voltage operation and higher on/off ratio were confirmed.
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