Establishment of device design and scaling for organic transistors with carrier concentration control
| Project/Area Number |
24656205
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Keio University (2013)
Kyoto University (2012) |
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Principal Investigator |
NODA Kei 慶應義塾大学, 理工学部, 講師 (30372569)
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| Co-Investigator(Renkei-kenkyūsha) |
WADA Yasuo 元 東洋大学, 学際融合研究科, 教授 (50386736)
YAMADA Hirofumi 京都大学, 工学研究科, 准教授 (40283626)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 有機トランジスタ / 電荷ドーピング / キャリア濃度 / デバイスシミュレーション / 分子ドーピング |
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| Research Abstract |
Device structures utilizing charge carrier doping with molecular dopants were newly proposed for improving and controlling device performance of organic field-effect transistors (OFETs), and those availabilities were confirmed by both device simulations and experiments. In addition, toward establishing device scaling rules, a new methodology for extracting gate-voltage-dependent contact resistance and channel parameters (e.g., field-effect mobility) from the electrical characteristics of a single OFET device was developed as well as a new device simulation technique considering carrier injection barriers (Schottky barriers) for realistic OFET devices.
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Report
(3 results)
Research Products
(24 results)
