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Development of Hetero-Materials Integration Technology for Multi-Functional Hybrid Large-Scale Integrated Circuits

Research Project

Project/Area Number 24656209
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionKyushu University

Principal Investigator

MIYAO Masanobu  九州大学, システム情報科学研究科(研究院, 特任教授 (60315132)

Co-Investigator(Kenkyū-buntansha) SADOH Taizoh  九州大学, 大学院システム情報科学研究院, 准教授 (20274491)
Project Period (FY) 2012-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywords電子デバイス・機器 / 集積回路 / 結晶成長
Research Abstract

To achieve hybrid-integration of multi-functional devices on Si platform, formation techniques of Si1-XGeX(X:0-1) on insulator have been investigated. First, the successive rapid-melting-growth technique has been developed, by utilizing the Ge fraction-dependent melting point of SiGe. This enables formation of multi-layered SiGe templates with different Ge fractions. Second, SiGe template with laterally-graded Ge fraction is achieved by controlling Si segregation during rapid-melting growth. These techniques facilitate heterogeneous integration of new functional devices on Si platform.

Report

(3 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • Research Products

    (22 results)

All 2014 2013 2012

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (16 results) (of which Invited: 1 results)

  • [Journal Article] Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region2014

    • Author(s)
      R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
    • Journal Title

      ECS Solid State Letters

      Volume: Vol.3, No.5 Issue: 5 Pages: 61-64

    • DOI

      10.1149/2.003405ssl

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dynamic analysis of rapid-melting growth using SiGe on insulator2014

    • Author(s)
      R. Matsumura , Y. Tojo, M. Kurosawa, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films

      Volume: Vol.557 Pages: 125-128

    • DOI

      10.1016/j.tsf.2013.08.129

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth2014

    • Author(s)
      H. Chikita, R. Matsumura, Y. Tojo, H. Yokoyama, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films

      Volume: Vol.557 Pages: 139-142

    • DOI

      10.1016/j.tsf.2013.08.035

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth2013

    • Author(s)
      Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
    • Journal Title

      Applied Physics Letters

      Volume: Vol.102 Issue: 9

    • DOI

      10.1063/1.4794409

    • Related Report
      2013 Final Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] (Invited) Hybrid- Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---2013

    • Author(s)
      M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
    • Journal Title

      ECS Transactions

      Volume: Vol.50 Issue: 5 Pages: 59-70

    • DOI

      10.1149/05005.0059ecst

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth2012

    • Author(s)
      R. Matsumura, Y Tojo, M Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao
    • Journal Title

      Applied Physics Letters

      Volume: Vol.101 Issue: 24

    • DOI

      10.1063/1.4769998

    • Related Report
      2013 Final Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Presentation] Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate2014

    • Author(s)
      R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Related Report
      2013 Final Research Report
  • [Presentation] Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate2014

    • Author(s)
      R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      仙台
    • Related Report
      2013 Annual Research Report
  • [Presentation] Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth2013

    • Author(s)
      M. Miyao, R. Matsumura, M. Kurosawa, K. Toko, and T. Sadoh
    • Organizer
      International Conference on Solid State Devices and Materials2013, SSDM2013
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth2013

    • Author(s)
      R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
    • Organizer
      International Conference on Solid State Devices and Materials 2013, SSDM2013
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
  • [Presentation] Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator2013

    • Author(s)
      R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
    • Organizer
      The 17th International Conference on Crystal Growth and Epitaxy, ICCGE-17
    • Place of Presentation
      Warsaw, Poland
    • Related Report
      2013 Final Research Report
  • [Presentation] 3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid -Melting Growth2013

    • Author(s)
      Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
  • [Presentation] Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid -Melting-Growth2013

    • Author(s)
      R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
  • [Presentation] Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator2013

    • Author(s)
      R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, M. Miyao
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
  • [Presentation] Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films2013

    • Author(s)
      Y. Kinoshita, Y. Tojo, R. Matsumura, T. Sadoh, T. Nishimura, and M. Miyao
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
  • [Presentation] Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn /Si(100) Structure2013

    • Author(s)
      H. Chikita, R. Matsumura, Y. Tojo, Y. Kinoshita, T. Sadoh, and M. Miyao
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Final Research Report
  • [Presentation] Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth2013

    • Author(s)
      R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
    • Organizer
      International Conference on Solid State Devices and Materials 2013
    • Place of Presentation
      福岡
    • Related Report
      2013 Annual Research Report
  • [Presentation] Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth2012

    • Author(s)
      R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
    • Organizer
      PRiME 2012, ECS Pacific RIM Meeting 2012
    • Place of Presentation
      Hawaii
    • Related Report
      2013 Final Research Report
  • [Presentation] Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process2012

    • Author(s)
      R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao
    • Organizer
      PRiME 2012, ECS Pacific RIM Meeting 2012
    • Place of Presentation
      Hawaii
    • Related Report
      2013 Final Research Report
  • [Presentation] Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth2012

    • Author(s)
      R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
    • Organizer
      International Conference on Solid State Devices and Materials 2012, SSDM2012
    • Place of Presentation
      Kyoto
    • Related Report
      2013 Final Research Report
  • [Presentation] Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform2012

    • Author(s)
      Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
    • Organizer
      E-MRS 2012 Fall Meeting
    • Place of Presentation
      Warsaw
    • Related Report
      2013 Final Research Report 2012 Research-status Report
  • [Presentation] Stripe-Length Dependent Laterally Graded SiGe Profiles by Rapid-Melting-Growth2012

    • Author(s)
      R. Matsumura
    • Organizer
      E-MRS 2012 Fall Meeting
    • Place of Presentation
      Warsaw
    • Related Report
      2012 Research-status Report

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Published: 2013-05-31   Modified: 2019-07-29  

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