| Project/Area Number |
24656209
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
MIYAO Masanobu 九州大学, システム情報科学研究科(研究院, 特任教授 (60315132)
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| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院システム情報科学研究院, 准教授 (20274491)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 電子デバイス・機器 / 集積回路 / 結晶成長 |
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| Research Abstract |
To achieve hybrid-integration of multi-functional devices on Si platform, formation techniques of Si1-XGeX(X:0-1) on insulator have been investigated. First, the successive rapid-melting-growth technique has been developed, by utilizing the Ge fraction-dependent melting point of SiGe. This enables formation of multi-layered SiGe templates with different Ge fractions. Second, SiGe template with laterally-graded Ge fraction is achieved by controlling Si segregation during rapid-melting growth. These techniques facilitate heterogeneous integration of new functional devices on Si platform.
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