| Project/Area Number |
24656213
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
NAITO Hiroyoshi 大阪府立大学, 工学(系)研究科(研究院), 教授 (90172254)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 有機トランジスタ / 塗布プロセス / ナノ粒子 / 有機・無機ハイブリッド / C8-BTBT / 短チャネル / 有機・無期ハイブリッド |
|---|
| Research Abstract |
The device characteristic in which mobility exceeds 1 cm^2/Vs at the short channel length about 5 \mu m is necessary for practical use of organic thin film transistors. In thin film transistors with top-gate configuration and with channel length of 5 \mu m fabricated using a newly developed organic semiconductor, we have obtained the highest field effect mobility of 1.5 cm^2/Vs in the linear regime of the top-gate transistors. We stress that we have achieved the target value for the field-effect mobility and thereby we have opened new era for the application of organic thin-film transistors
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