Temperature independent SiC photodetector operating up to 500 degreeC
| Project/Area Number |
24656230
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kyoto University |
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Principal Investigator |
SUDA Jun 京都大学, 工学(系)研究科(研究院), 准教授 (00293887)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | SiC / センサー / 光検出器 / 高温 / 厳環境 / 紫外線 / pn接合 / 炭化珪素 / リーク電流 / パッシベーション / 炭化硅素 / 検出器 / 高温デバイス |
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| Research Abstract |
Ultra-violet photo detectors which can be operated up to 500 degreeC are needed for monitoring system of power plant and chemical plant. Such photo detectors are also expected to be used in engine combustion monitoring for automotive or aerospace field. Silicon (Si) which is mainly used in nowadays electronics cannot be operated at over 200 degreeC due to its small energy bandgap of 1.12 eV. Wide-bandgap semiconductor, silicon carbide (4H-SiC) is promising candidate for such photo detectors. In this study, we investigated optical properties of SiC, which are required for device design. We also found effective suppression method of leakage current which degrades sensitivity of photo detector. Based on these results, we successfully demonstrated operation of SiC photo detectors at 500 degree C.
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Report
(3 results)
Research Products
(6 results)
