• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of a Device Simulator Based on an Atomistic Large Scale Calculation

Research Project

Project/Area Number 24656235
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionKobe University

Principal Investigator

OGAWA Matsuto  神戸大学, 工学(系)研究科(研究院), 教授 (40177142)

Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywordsナノデバイス / 並列化固有値解析 / 原子軌道展開 / 非平衡グリーン関数法 / ガウス求積法 / Jacobi-Davidson法 / 第一原理計算 / 多項式線形結合法 / Gauss求積法 / 非平衡Green関数法 / 多項式線形結合 / 第一原理密度汎関数法 / 強束縛近似法 / 量子輸送 / 量子力学的シミュレーション / 非平衡グリーン関数 / 第一原理バンド構造計算 / 量子デバイスシミュレーション / スペクトル法 / 擬スペクトル法 / 有限差分法
Outline of Final Research Achievements

[Implementation of a Super-Parallelized BPSM Routine] An order-N simulation method has been established using an expansion method based on a polynomial linear combination of atomic orbitals. In this method Legendre-polynomial, Chevyshev and/or Laguerre-polynomial expansion has been used to parallelize Gaussian quadrature which results in an order-N simulation twice as accurate as conbentional method.
[Realization of a Super-Parallelized Arnoldi/Jacobi-Davidson Eigenvalue Solver]To analyze quantum transport phenomena in such as a DGMOSFET or a FINFET, where quantum confinement is much stronger than in conventional structures, a mode expansion method in the confined structures is found to be utilized effectively in the simulation. To make most of the property, an simulation method has been achieved to analyze larger device size with more than 25 nm in which the matrix size is as large as 10000x10000.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • 2012 Research-status Report
  • Research Products

    (31 results)

All 2014 2013 2012 Other

All Journal Article (13 results) (of which Peer Reviewed: 11 results,  Acknowledgement Compliant: 4 results) Presentation (12 results) Remarks (5 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Strain-induced modulation of anisotropic photoconductivity in graphene,2014

    • Author(s)
      A. Mehdipour, K. Sasaoka, M. Ogawa, and S. Souma,
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Pages: 115103-115103

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Proposal of simplified model for absorption coefficients in quantum dot array based intermediate band solar cell structure,2014

    • Author(s)
      A. Mehdipour, K. Sasaoka, M. Ogawa, and S. Souma,
    • Journal Title

      IEICE Electronics Express

      Volume: 11 Pages: 20140548-20140548

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Simulation-based design of a strained graphene field effect transistor incorporating the pseudo magnetic field effect,2014

    • Author(s)
      S. Souma, M. Ueyama, and M. Ogawa
    • Journal Title

      Appl. Phys. Lett.

      Volume: 104 Pages: 213505-213505

    • Related Report
      2014 Annual Research Report
  • [Journal Article] Pure spin current induced by adiabatic quantum pumping in zigzag-edged graphene nanoribbons,2014

    • Author(s)
      S. Souma and M. Ogawa
    • Journal Title

      Appl. Phys. Lett.

      Volume: 104 Pages: 1831031-4

    • Related Report
      2014 Annual Research Report
  • [Journal Article] Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling2014

    • Author(s)
      Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Theoretical performance estimation of silicene, germanene, and graphene nanoribbon fieldeffect transistors under ballistic transport2014

    • Author(s)
      Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
    • Journal Title

      Applied Physics Express,

      Volume: 7 Pages: 35102-35102

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Effect of lateral strain on gate induced control of electrical conduction in single layer graphene device2014

    • Author(s)
      Y. Ohmori, S. Souma, and M. Ogawa
    • Journal Title

      J. Computational Electron.

      Volume: 12 Pages: 170-174

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Channel Length Scaling Limits of III-V Channel MOSFETs Voverned by Source-Drain Direct Tunneling2014

    • Author(s)
      S. Koba, M. Ohmori, Y. Maegawa, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Theoretical Performance Estimation of Silicen, Germanene, and Graphen Nanoribbon Field-Effect Transistors under Ballistic Transport2014

    • Author(s)
      S. Kaneko, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
    • Journal Title

      Appl. Phys. Express

      Volume: 7 Pages: 35102-35102

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Computational Study on Band Structure Engineering using Graphene Nanomeshes2013

    • Author(s)
      R. Sako, N. Hasegawa, H,. Tsuchiya, and M. Ogawa
    • Journal Title

      J. Appl. Phys.

      Volume: 113 Pages: 143702-143702

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort Channel III-V Metal-Oxide-Semiconductor Field-Effet Transistors2013

    • Author(s)
      S. Koba, M. Ohmori, Y. Maegawa, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
    • Journal Title

      Appl. Phys. Express

      Volume: 6 Pages: 64301-64301

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport2012

    • Author(s)
      TAKIGUCHI Naoya+;KOBA Shunsuke+;TSUCHIYA Hideaki;OGAWA Matsuto
    • Journal Title

      IEEE Trans. on Electron Devices,

      Volume: Vol. 59, No. 1 Pages: 206-211

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Atomistic Modeling of Electron-Phonon Interaction and Electron Mobility in Si Nanowires2012

    • Author(s)
      YAMADA Yoshihiro+;TSUCHIYA Hideaki;OGAWA Matsuto
    • Journal Title

      Journal of Applied Physics

      Volume: Vol. 111, No. 6

    • Related Report
      2012 Research-status Report
    • Peer Reviewed
  • [Presentation] Photoconductivity-based strain sensing in graphene2014

    • Author(s)
      Amir Mehdipour, Kenji Sasaoka, Matsuto Ogawa, and Satofumi Souma
    • Organizer
      International Symposium on Recent Progress of Photonic Devices and Materials
    • Place of Presentation
      Kobe University (Kobe)
    • Year and Date
      2014-11-13 – 2014-11-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] モンテカルロシミュレーションによるSiマルチゲート構造MOSFETの準バリスティック輸送特性解析2014

    • Author(s)
      石田 良馬, 木場 隼介, 土屋 英昭, 鎌倉 良成, 森 伸也, 宇野 重康, 小川 真人
    • Organizer
      応用物理学会関西支部平成26年度第2回講演会
    • Place of Presentation
      神戸大学、神戸市
    • Year and Date
      2014-11-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] モンテカルロ法を用いたSiダブルゲート構造MOSFETの準バリスティック輸送係数の抽出2014

    • Author(s)
      土屋 英昭, 石田 良馬, 鎌倉 良成, 森 伸也, 宇野 重康, 小川 真人
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会
    • Place of Presentation
      機会振興会館、東京
    • Year and Date
      2014-11-06 – 2014-11-07
    • Related Report
      2014 Annual Research Report
  • [Presentation] Numerical simulation of current noise caused by potential fluctuation in nanowire FET with an oxide trap2014

    • Author(s)
      Yuki Furubayashi, Matsuto Ogawa, Satofumi Souma
    • Organizer
      2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2014)
    • Place of Presentation
      Mielparque Yokohama, Yokohama, Japan
    • Year and Date
      2014-09-09 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method2014

    • Author(s)
      Ryoma Ishida, Shunsuke Koba, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Shigeyasu Uno, Matsuto Ogawa
    • Organizer
      2014 International Conference on Simulation of Semiconductor Processes and Devices
    • Place of Presentation
      Mielparque Yokohama, Yokohama, Japan
    • Year and Date
      2014-09-09 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of Axial Strain on Switching Behavior of Carbon Nanotube Tunneling Field Effect Transistors2013

    • Author(s)
      T. Nakano, H. Nagai, M. Ogawa, and S. Souma
    • Organizer
      Int'l Workshop on Compt. Electron. 2013
    • Place of Presentation
      奈良公会堂
    • Related Report
      2013 Research-status Report
  • [Presentation] Quantu mDynamical Simulation of Photo-Induced Graphene Switch2013

    • Author(s)
      T. Akiyama, M. Ueyama, E. Nishimura, M. Ogawa, and S. Souma
    • Organizer
      Int'l Workshop on Compt. Electron. 2013
    • Place of Presentation
      奈良公会堂
    • Related Report
      2013 Research-status Report
  • [Presentation] Effect of lateral strain on wlwctronic transport in graphene: interplay between band gap formation and pseudo magnetic field effet2013

    • Author(s)
      M. Ueyama, M. Ogawa, and S. Souma
    • Organizer
      5th Int'l Conf. on Recent Progress in Graphene Research 2013
    • Place of Presentation
      東京
    • Related Report
      2013 Research-status Report
  • [Presentation] Performance projections of III-V channel nanowire nMOSFETs in the ballistic transport limit2013

    • Author(s)
      K. Shimoida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
    • Organizer
      Int'l Conf. on Solid St. Device and Materials (SSDM2013)
    • Place of Presentation
      福岡
    • Related Report
      2013 Research-status Report
  • [Presentation] Analysis of Tunneling Characteristics through Hetero Interface of InAs/Si Nanowire Tunneling Field Effect Transistors2012

    • Author(s)
      Y. Miyoshi, M. Ogawa, S. Souma, H. Nakamura
    • Organizer
      SISPAD2012
    • Place of Presentation
      Denver Co.
    • Related Report
      2012 Research-status Report
  • [Presentation] Fast Perturbative Treatment for Efficient Nano-Scale Device Simulation Based on Bridge-Function Pseudo-Spectral Method2012

    • Author(s)
      Y. Saito, S. Souma, M. Ogawa
    • Organizer
      SISPAD 2012
    • Place of Presentation
      Denver Co.
    • Related Report
      2012 Research-status Report
  • [Presentation] 今日結合分子動力学法を用いたグラフェンナノリボンの機械的変形と電子状態に関するシミュレーション

    • Author(s)
      貝野昭造、相馬聡文、小川真人
    • Organizer
      電子情報通信学会
    • Place of Presentation
      東京機械振興会館
    • Related Report
      2013 Research-status Report
  • [Remarks] Multiband Simulation of Quantum Transport

    • URL

      http://www2.kobe-u.ac.jp/~lerl2/j_research01.html

    • Related Report
      2014 Annual Research Report
  • [Remarks] Band Calculation of Si (diamond)

    • URL

      http://www2.kobe-u.ac.jp/~lerl2/j_research03_3.html

    • Related Report
      2014 Annual Research Report
  • [Remarks] 計算ナノエレクトロニクス研究紹介

    • URL

      http://www2.kobe-u.ac.jp/~lerl2/j_research.html

    • Related Report
      2013 Research-status Report
  • [Remarks] 研究紹介

    • URL

      http://www2.kobe-u.ac.jp/̃lerl2/j_research.html

    • Related Report
      2012 Research-status Report
  • [Remarks] 研究費・受賞等

    • URL

      http://www2.kobe-u.ac.jp/̃lerl2/j_work.html

    • Related Report
      2012 Research-status Report
  • [Patent(Industrial Property Rights)] 特許2012

    • Inventor(s)
      喜多 隆,小川 真人
    • Industrial Property Rights Holder
      喜多 隆,小川 真人
    • Industrial Property Rights Type
      特許
    • Filing Date
      2012-07-27
    • Acquisition Date
      2014-03-20
    • Related Report
      2013 Research-status Report

URL: 

Published: 2013-05-31   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi