| Project/Area Number |
24656450
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Material processing/treatments
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
KUSANO Eiji 金沢工業大学, バイオ・化学部, 教授 (00278095)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | スパッタリング / CZTS / 熱反射壁 / スパタリング / ホットウォール / CZTS太陽電池光吸収層 |
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| Outline of Final Research Achievements |
The feasibility of composition and property controls by the use of the hot reflector wall, which is intended to enhance the probability that Zn and S atoms re-evaporated from the growing thin film surface re-impinge on the film surface, has been investigated in one-step rf-sputter deposition of Cu2ZnSnS4. It is shown that the use of the reflector wall suppresses the composition deviation of Zn and S from the stoichiometry and improves the crystallinity evaluated by X-ray diffraction, showing a larger crystalline diameter of 16-26 nm, especially in thin films deposited at a high substrate temperature of 400 °C and by using the reflector wall with a temperature of 400 °C. In addition, optical band gap decreases to 1.6 -1.7 eV for all substrate temperatures. It is concluded that the use of the reflector wall suppresses the composition deviation from the stoichiometry in the quaternary compound thin films, resulting in the improvement of optical and electrical properties.
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