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Improvement of mobility for CVD graphene by removing catalytic metal

Research Project

Project/Area Number 24656456
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Metal making engineering
Research InstitutionThe University of Tokyo

Principal Investigator

NAGASHIO Kosuke  東京大学, 工学(系)研究科(研究院), 准教授 (20373441)

Project Period (FY) 2012-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywordsグラフェン / CVD / 単結晶 / 高移動度 / Cu / MICA
Research Abstract

CVD growth of graphene is simple and effective way for graphene synthesis. In this study, mica(001) substrate was used to obtain the single crystal graphene, instead of Al2O3 and MgO. The Cu deposition of 800 nm in thickness was carried out on mica. After the H2 annealing at 1000 C, the surface roughness was reduced to 0.5 nm (RMS), which indicates very smooth surface for graphene growth. Based on the precise control of H2/Ar gas flow, high quality graphene could be grown on Cu. This was confirmed by Raman. The mobility of measured device was ~4500 cm2/Vs.

Report

(3 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • Research Products

    (8 results)

All 2014 2013 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (4 results) Remarks (2 results)

  • [Journal Article] The crystal orientation relation and macroscopic surface roughness in heteroepitaxial graphene grown on Cu/mica2014

    • Author(s)
      J. L. Qi, K. Nagashio, T. Nishimura and A. Toriumi
    • Journal Title

      Nanotechnology

      Volume: 25 Pages: 185602-185602

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica2014

    • Author(s)
      J. L. Qi, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      nanotechnology

      Volume: na

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research2013

    • Author(s)
      J. L. Qi, K. Nagashio, W. Liu, T. Nishimura and A. Toriumi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Year and Date
      2013-09-26
    • Related Report
      2013 Final Research Report
  • [Presentation] CH_4-CVD単層グラフェン成長におけるH_2流量効果2013

    • Author(s)
      斉鈞雷, 長汐晃輔, 西村知紀, 鳥海明
    • Organizer
      2013年第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科
    • Year and Date
      2013-03-27
    • Related Report
      2013 Final Research Report
  • [Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research

    • Author(s)
      J. L. Qi, K. Nagashio, W. Liu, T. Nishimura, and A. Toriumi
    • Organizer
      2013 International conference on solid state devices and materials (SSDM)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk
    • Related Report
      2013 Annual Research Report
  • [Presentation] CH4-CVD単層グラフェン成長におけるH2流量効果

    • Author(s)
      斉均雷,長汐晃輔,西村知紀,鳥海明
    • Organizer
      応用物理学会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Remarks]

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2013 Final Research Report
  • [Remarks] 東京大学マテリアル工学専攻長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/

    • Related Report
      2013 Annual Research Report

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Published: 2013-05-31   Modified: 2019-07-29  

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