| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
The purpose of this study is to investigate growth and characterization of a CIGS single crystal to elucidate its basic properties in order to enable higher efficiency photovoltaic panels. Large size CIGS single crystal was successfully grown by THM. No secondary phases are observed from XRD and Raman spectroscopy measurements. The FWHM of the XRC for the (112) oriented CIGS single crystal is 103 arcsec. The results show that good-quality single-phase CZTSe single crystals can be obtained by THM growth. The composition of the CIGS single crystal was homogeneous and the stoichiometric ratio of CIGS was found to be slightly Cu-poor, In-rich, Ga-rich and Se-poor. Therefore, it is assumed that the In on Cu antisite and the Se vacancy are dominant, leading to n-type conduction.
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