Development of InGaAs/InAs on Silicon light emitting devices for environmental analyses

• Project/Area Number: 24681026
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Microdevices/Nanodevices
• Research Institution: Tohoku University
• Principal Investigator: Higo Akio 東北大学, 原子分子材料科学高等研究機構, 助教 (60451895)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥26,520,000 (Direct Cost: ¥20,400,000、Indirect Cost: ¥6,120,000); Fiscal Year 2015: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000); Fiscal Year 2014: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000); Fiscal Year 2013: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000); Fiscal Year 2012: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
• Keywords: MOVPE / InGaAs / 化合物半導体 / MEMS / NEMS / LED / 光デバイス / InAs / シリコンプラットフォーム / 光源 / 発光素子

Outline of Final Research Achievements

We have studied on III-V compound semiconductor materials growth on silicon substrate for Si/III-V monolithic integration and optical characteristics by photoluminescence. We have successfully fabricated InGaAs layer on silicon substrate and observed 1y00nm wavelength by photoluminescence measurement. Infra red emitting devices have much attention for gases sensing in the environmental analyses and it it possible to realize the integration of III-V emitting device and Si LSI.

Research Products

• [Journal Article] Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system (2014)
  • Author(s): T. Kiba, T. Tanaka, Y. Tamura, A. Higo, C. Thomas, S. Samukawa and A. Murayama
  • Journal Title: AIP Advances Volume: 4 Issue: 10 Pages: 107112-107112
  • DOI: 10.1063/1.4897958
  • Peer Reviewed / Open Access
• [Presentation] Low-damage etching process for the fabrication of GaAs based light emitting devices (2015)
  • Author(s): C. Thomas, A. Higo, T. Kiba, Y. Tamura, N. Okamoto, I. Yamashita, A. Murayama, S. Samukawa
  • Organizer: AVS 62nd International symposium and exhibition, NS+EN+SS-TuA-2
  • Place of Presentation: San Jose (USA)
  • Year and Date: 2015-10-18
  • Int'l Joint Research
• [Presentation] Top-down InGaAs/GaAs nanopillars fabrication using a bio-nano process and a neutral beam etching process (2014)
  • Author(s): Cedric Thomas, Kenichi Yoshikawa, Chang-Yong Lee, Yosuke Tamura, Akio Higo, Takayuki Kiba, Akihiro Murayama, Ichiro Yamashita, Seiji Samukawa
  • Organizer: American Vacuum Society 61st International Symposium & Exhibition
  • Place of Presentation: Baltimore (USA)
  • Year and Date: 2014-11-13
• [Presentation] OPTICAL CHARACTERISTICS OF GAAS QUANTUM NANODISKS ARRAYS BY USING NEUTRAL BEAM TOP - DOWN PROCESS (2014)
  • Author(s): Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Ichiro Yamashita, Akihiro Murayama, and Seiji Samukawa
  • Organizer: 2014 International Conference on Optical MEMS and Nanophotonics
  • Place of Presentation: Glasgow (Scotland)
  • Year and Date: 2014-08-19
• [Presentation] Fabrication of GaAs/AlGaAs nano-pillars using bio-tempate combined with neutral beam defect-free etching (2013)
  • Author(s): Cdric Thomas, Yosuke Tamura, Akio Higo, Naofumi Okamoto, Ichiro Yamashita, and Seiji Samukawa
  • Organizer: AVS 60th International Symposium & Exhibition
  • Place of Presentation: Long Beach, California, US
• [Presentation] Photoluminescence of High-density and Sub-20-nm GaAs Nanodisks Fabricated with a Neutral Beam Etching Process and MOVPE Regrowth for High Performance QDs Devices (2013)
  • Author(s): Yosuke Tamura, Akio Higo, Takayuki Kiba, Wang Yunpeng, Makoto Igarashi, Cedric Thomas, Weiguo Hu, Mohd Erman Fauzi, Akihiro Murayama, Masakazu Sugiyama, Yoshiaki Nakano, and Seiji Samukawa
  • Organizer: the 13th IEEE International Conference on Nanotechnology
  • Place of Presentation: Beijing, China
• [Presentation] Design of photonic crystal cavity for hexagonal islands (2012)
  • Author(s): J. O. Kjellman, A. Higo. Y. Nakano
  • Organizer: Photonics Conference (IPC), 2012 IEEE
  • Place of Presentation: カリフォルニア,米国
• [Presentation] Photoluminescence of InGaAs islands on Si(III)substrate grown using micro-channel selective-area MOVPE (2012)
  • Author(s): Y. Fujimoto, A. Higo. J. O. Kjellman, S. Watanabe, M. Sugiyama, and Y. Nakano
  • Organizer: IEEE optical MEMS and Nanophotonics 2012
  • Place of Presentation: パンフ, カナダ
• [Patent(Industrial Property Rights)] 半導体集積回路基板およびその製造方法 (2013)
  • Inventor(s): 肥後昭男, 中野義昭, 杉山正和, 藤本悠, 渡邉翔太,ヨンケルマン
  • Industrial Property Rights Holder: 東京大学
  • Industrial Property Number: 2013-027283
  • Filing Date: 2013-02-15