Electrical spin generation and its manipulation in semiconductor nanostructures
Project/Area Number |
24684019
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Partial Multi-year Fund |
Research Field |
Condensed matter physics I
|
Research Institution | Tohoku University |
Principal Investigator |
KOHDA Makoto 東北大学, 工学(系)研究科(研究院), 准教授 (00420000)
|
Co-Investigator(Renkei-kenkyūsha) |
NITTA Junsaku 東北大学, 大学院工学研究科, 教授 (00393778)
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥28,600,000 (Direct Cost: ¥22,000,000、Indirect Cost: ¥6,600,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
|
Keywords | 半導体スピントロニクス / スピン軌道相互作用 / InGaAs / 量子ポイントコンタクト / スピン生成 / スピントロニクス / 半導体 / 2次元電子ガス / 有効磁場 / シュテルン-ゲルラッハの実験 |
Outline of Final Research Achievements |
We demonstrated electrical spin injection with InGaAs based quantum point contact which holds strong spin orbit interaction. By applying side gates in the quantum point contact, we can induce not only one dimensional channel for electrons but also spatial change of effective magnetic fields induced by spin orbit interaction. This acts to spin dependent force for electron spin resulting in the spatial separation of up spin and down spin. We observed 0.5(2e^2/h) conductance plateau and, by applying external magnetic fields, we confirmed the spin polarized direction and spin polarization.
|
Report
(4 results)
Research Products
(39 results)
-
-
-
-
-
-
-
-
-
-
-
[Journal Article] Gate-controlled persistent spin helix state in InGaAs quantum wells2012
Author(s)
M. Kohda, V. Lechner, Y. Kunihashi, T. Dollinger, P. Olbrich, C. Schönhuber, I. Caspers, V. V. Bel’kov, L. E. Golub, D. Weiss, K. Richter, J. Nitta, and S. D. Ganichev
-
Journal Title
Phys. Rev. B Rapid Comm.
Volume: 86
Issue: 8
DOI
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] Gate controlled long spin relaxation times in the persistent spin helix state in semiconductors2012
Author(s)
M. Kohda, V. Lechner, Y.Kunihashi, T. Dollinger, P.Olbrich, C. SchSnhuber, I. Caspers, V. V Bel'kov, L. E. Golub, D. Weiss, K. Richter, J. Nitta, and S. D. Ganichev.
Organizer
The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS VII)
Place of Presentation
Eindhoven, Netherlands
Year and Date
2012-08-03
Related Report
-
-
-
-
-
-
-