Development of functions of organic semiconductors by high-densigty carrier control
| Project/Area Number |
24684023
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Condensed matter physics II
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥27,430,000 (Direct Cost: ¥21,100,000、Indirect Cost: ¥6,330,000)
Fiscal Year 2014: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2013: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2012: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
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| Keywords | 有機半導体 / 有機トランジスタ / 有機エレクトロニクス / 金属有機半導体界面 / 電気二重層トランジスタ / カーボンナノチューブ |
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| Outline of Final Research Achievements |
Properties of several materials were controlled employing electrical-double-layer transistor, which utilizes strong electric field at interfaces between solid and electrolyte. In particular, a field-effect resistivity change in a resistance of metallic single-walled carbon nanotubes was realized. In situ optical absorption spectroscopic measurements revealed the resistance change is due to a change in a subband number. For organic semiconductors, reductions of electron injection barriers and changes in distributions of trapping levels were realized by controlling metal-semiconductor and insulator-semiconductor interfaces, respectively.
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Report
(4 results)
Research Products
(17 results)
