Current-induced effects in a single metal-insulator domain wall

Research Project

Project/Area Number	24684024
Research Category	Grant-in-Aid for Young Scientists (A)
Allocation Type	Partial Multi-year Fund
Research Field	Condensed matter physics II
Research Institution	The University of Tokyo
Principal Investigator	MORIYA Rai 東京大学, 生産技術研究所, 助教 (30548657)
Project Period (FY)	2012-04-01 – 2015-03-31
Project Status	Completed (Fiscal Year 2014)
Budget Amount *help	¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000) Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000) Fiscal Year 2013: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000) Fiscal Year 2012: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Keywords	強相関電子系 / 酸化物 / ナノ細線 / 酸化バナジウム
Outline of Final Research Achievements	We explored the novel conduction phenomena in a single metal-insulator domain wall confined in oxide nanowire. Within the three-year project, we demonstrated following results. 1) Fabricate high quality single crystalline oxide nanowire using home built vapour transport growth system. 2) Stabilize a single metal-insulator domain wall in suspended nanowire structure. 3) Current-controlled motion of a single metal-insulator domain wall. These results open up new possibility to utilize metal-insulator domain wall for both fundamental science and technology.

Report

(4 results)