Current-induced effects in a single metal-insulator domain wall
| Project/Area Number |
24684024
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Condensed matter physics II
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| Research Institution | The University of Tokyo |
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Principal Investigator |
MORIYA Rai 東京大学, 生産技術研究所, 助教 (30548657)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2013: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2012: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
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| Keywords | 強相関電子系 / 酸化物 / ナノ細線 / 酸化バナジウム |
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| Outline of Final Research Achievements |
We explored the novel conduction phenomena in a single metal-insulator domain wall confined in oxide nanowire. Within the three-year project, we demonstrated following results. 1) Fabricate high quality single crystalline oxide nanowire using home built vapour transport growth system. 2) Stabilize a single metal-insulator domain wall in suspended nanowire structure. 3) Current-controlled motion of a single metal-insulator domain wall. These results open up new possibility to utilize metal-insulator domain wall for both fundamental science and technology.
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Report
(4 results)
Research Products
(4 results)
