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Current-induced effects in a single metal-insulator domain wall

Research Project

Project/Area Number 24684024
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypePartial Multi-year Fund
Research Field Condensed matter physics II
Research InstitutionThe University of Tokyo

Principal Investigator

MORIYA Rai  東京大学, 生産技術研究所, 助教 (30548657)

Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2013: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2012: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Keywords強相関電子系 / 酸化物 / ナノ細線 / 酸化バナジウム
Outline of Final Research Achievements

We explored the novel conduction phenomena in a single metal-insulator domain wall confined in oxide nanowire. Within the three-year project, we demonstrated following results. 1) Fabricate high quality single crystalline oxide nanowire using home built vapour transport growth system. 2) Stabilize a single metal-insulator domain wall in suspended nanowire structure. 3) Current-controlled motion of a single metal-insulator domain wall. These results open up new possibility to utilize metal-insulator domain wall for both fundamental science and technology.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (4 results)

All 2013 2012

All Presentation (4 results)

  • [Presentation] Electrical spin injection into graphene through monolayer h-BN tunnel barrier2013

    • Author(s)
      守谷 頼
    • Organizer
      58th annual conference on magnetism and magnetic materials
    • Place of Presentation
      デンバー、アメリカ
    • Year and Date
      2013-11-03 – 2013-11-10
    • Related Report
      2013 Annual Research Report
  • [Presentation] Landau Level Crossing and Anti-crossing of Bilayer Two-dimensional Hole Gas in Ge/SiGe Quantum Well2013

    • Author(s)
      守谷 頼
    • Organizer
      2013 International conference on solid state devices and materials
    • Place of Presentation
      福岡
    • Year and Date
      2013-09-24 – 2013-09-27
    • Related Report
      2013 Annual Research Report
  • [Presentation] Landau level crossing and anti-crossing of bilayer two-dimensional hole gas in Ge/SiGe quantum well2013

    • Author(s)
      守谷 頼
    • Organizer
      EP2DS20-MSS16
    • Place of Presentation
      ブロツワフ、 ポーランド
    • Year and Date
      2013-07-01 – 2013-07-05
    • Related Report
      2013 Annual Research Report
  • [Presentation] Inlluence of current on a single metal-insulator domaln wall driven pnase transi tion in a VO_2 nanowire2012

    • Author(s)
      守谷頼
    • Organizer
      2012 Materials Research Society Spring Meeting
    • Place of Presentation
      ボストン(アメリカ)
    • Year and Date
      2012-04-10
    • Related Report
      2012 Annual Research Report

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Published: 2012-04-24   Modified: 2020-05-15  

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