| Budget Amount *help |
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2014: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2013: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Fiscal Year 2012: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
|
|---|
| Outline of Final Research Achievements |
In this study, we examined for the realization of phosphor-free nitride semiconductor-based white light-emitting diodes (LED). In order to realize these devices, we examined as follows,
1. Increase of luminescence efficiency of nitride-based green LED due to a plasmon effect by using an Ag fine particles. 2. We confirmed that moth-eye structure (nano-structure) and the multilayer reflector have realized the increase of light extraction efficiency. 3. We developed the wafer bonding technology with direct and using ITO light transparent electrode by ion irradiation.
|
