Development of group-III nitride double polar selective area growth process and fabrication of nanostructure device

• Project/Area Number: 24686014
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Applied physics, general
• Research Institution: Shizuoka University
• Principal Investigator: Takayuki Nakano 静岡大学, 工学部, 准教授 (00435827)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000); Fiscal Year 2015: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2013: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2012: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
• Keywords: 中性子検出 / 半導体検出器 / III族窒化物半導体 / エピタキシャル成長 / 放射線検出特性 / 結晶成長 / 放射線検出 / 化合物半導体 / Ⅲ族窒化物半導体 / III族窒化物 / MOVPE

Outline of Final Research Achievements

In this research, the development of novel neutron detector using group-III nitride semiconductor is carried out. At first, we proposed GdGaN and BGaN as neutron detector material, because Ga atom and B atom have large neutron capture cross sectional area. In the case of GdGaN, fabrication of high quality GdGaN crystal was not achieved, because Gd source gases supply is difficult by low saturated vapor pressure of that. In the case of BGaN crystal growth, the fabrication of BGaN epitaxial layer is achieved, and BN mole fraction of BGaN was about 1%. When the radiation detection measurement using the BGaN Schottky diode was carried out, detection signal by capturing neutron was observed. This result indicate that our proposal is correctly. Moreover, we evaluated the characteristics of radiation detection by group-III nitride semiconductor, and we derived mobility lifetime products of GaN in radiation detection.

Research Products

• [Journal Article] Effect of substrate offcut angle on BGaN epitaxial growth (2016)
  • Author(s): Kohei Ueyama, Hidenori Mimura, Yoku Inoue, Toru Aoki, and Takayuki Nakano
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 5S Pages: 05FD05-05FD05
  • DOI: 10.7567/jjap.55.05fd05
  • NAID: 210000146507
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Study of radiation detection properties of GaN pn diode (2016)
  • Author(s): Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki and Takayuki Nakano
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 5S Pages: 05FJ02-05FJ02
  • DOI: 10.7567/jjap.55.05fj02
  • NAID: 210000146544
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Neutron detection using boron gallium nitride semiconductor material (2014)
  • Author(s): Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano
  • Journal Title: APL Material Volume: 2 Issue: 3
  • DOI: 10.1063/1.4868176
  • Peer Reviewed
• [Journal Article] Double polar selective area growth of GaN MOVPE by using carbon mask layers (2013)
  • Author(s): Yohei Fujita, Yasushi Takano, Yoku Inoue, Masatomo Sumiya, Shunro Fuke and Takayuki Nakano
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 8S Pages: 08JB26-08JB26
  • DOI: 10.7567/jjap.52.08jb26
  • Peer Reviewed
• [Presentation] MOVPE法を用いたBGaN成長における成長雰囲気の検討 (2016)
  • Author(s): 中村匠, 矢野雄大, 上山浩平，青木徹，井上翼，小島一信，秩父重英，中野貴之
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学、目黒区、東京都
  • Year and Date: 2016-03-19
• [Presentation] pin-GaN ダイオードを用いたα線検出特性評価 (2016)
  • Author(s): 有川卓弥、杉浦睦仁、宇佐美茂佳、久志本真希、本田善央、天野浩、三村秀典、井上翼、青木徹、中野貴之
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学、目黒区、東京都
  • Year and Date: 2016-03-19
• [Presentation] III族窒化物半導体を用いた放射線検出器の開発 (2016)
  • Author(s): 中野貴之
  • Organizer: 2015年静岡大学テニュアトラックシンポジウム
  • Place of Presentation: 静岡大学、浜松市、静岡県
  • Year and Date: 2016-03-01
  • Invited
• [Presentation] Evaluation of radiation detection characteristics for GaN diode (2015)
  • Author(s): Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Act City Hamamatsu, Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Characterization of fabricated BGaN films at each growth conditions (2015)
  • Author(s): Kohei Ueyama, Hidenori Mimura, Yoku Inoue, Toru Aoki, and Takayuki Nakano
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Act City Hamamatsu, Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Development of high B composition BGaN by Mg surfactant (2015)
  • Author(s): T. Nakamura, K. Ueyama, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano
  • Organizer: The 14th International Conference on Global Research and Education
  • Place of Presentation: Act City Hamamatsu, Hamamatsu, Japan
  • Year and Date: 2015-09-28
  • Int'l Joint Research
• [Presentation] Efficiency of Al source supply to B composition in BAlGaN epitaxial growth (2015)
  • Author(s): T. Arikawa, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano
  • Organizer: The 14th International Conference on Global Research and Education
  • Place of Presentation: Act City Hamamatsu, Hamamatsu, Japan
  • Year and Date: 2015-09-28
  • Int'l Joint Research
• [Presentation] MOVPE法にて作製したBGaN結晶の諸特性の評価 (2015)
  • Author(s): 上山 浩平、中村 匠、三村 秀典、井上 翼、青木 徹、中野 貴之
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場、名古屋市、愛知県
  • Year and Date: 2015-09-13
• [Presentation] GaNにおける放射線検出特性の実験的評価(2) (2015)
  • Author(s): 杉浦 睦仁、久志本 真希、光成 正、山下 康平、本田 善央、天野 浩、三村 秀典、井上 翼、青木 徹、中野 貴之
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場、名古屋市、愛知県
  • Year and Date: 2015-09-13
• [Presentation] Dependencies of growth temperature and carrier gases in BGaN growth (2015)
  • Author(s): K. Ueyama, H. Mimura, Y. Inoue, T. Aoki and T. Nakano
  • Organizer: 34th Electronic Materials Symposium (EMS34)
  • Place of Presentation: Laforret Biwako, Moriyama, Shiga
  • Year and Date: 2015-07-15
• [Presentation] Characterization of radiation detection for GaN semiconductor material (2015)
  • Author(s): M. Sugiura, M. Kushimoto, T. Mitsunari, K. Yamashita, Y. Honda, H. Amano, Y. Inoue, H. Mimura, T. Aoki and T. Nakano
  • Organizer: 34th Electronic Materials Symposium (EMS34)
  • Place of Presentation: Laforret Biwako, Mosiyama, Shiga
  • Year and Date: 2015-07-15
• [Presentation] GaN 半導体材料における放射線検出特性評価 (2015)
  • Author(s): 杉浦睦仁，久志本真希，光成正，山下康平，本田善央，天野 浩，三村秀典，井上翼，青木徹，中野貴之
  • Organizer: 第7回 窒化物半導体結晶成長講演会
  • Place of Presentation: 東北大学片平キャンパス片平さくらホール、仙台市、宮城県
  • Year and Date: 2015-05-07
• [Presentation] Characterization of Radiation Detection for GaN (2015)
  • Author(s): M. Sugiura, M. Kushimoto, T. Mitsunari, K Yamashita, Y. Honda, H. Amano, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano
  • Organizer: The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] GaNダイオードの放射線検出特性評価 (2015)
  • Author(s): 杉浦睦仁、久志本真希、光成 正、山下康平、本田善央、天野浩、三村秀典、井上翼、青木徹、中野貴之
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス、神奈川県平塚市
  • Year and Date: 2015-03-11 – 2015-03-15
• [Presentation] BGaN成長における基板off角度依存性 (2014)
  • Author(s): 上山浩平，渥美勝浩，三村秀典，井上翼，青木徹，中野貴之
  • Organizer: 第3回結晶工学未来塾
  • Place of Presentation: 学習院創立百周年記念会館、東京都豊島区
  • Year and Date: 2014-11-13
• [Presentation] Evaluation of Radiation Detection Characteristic for GaN Semiconductor Material (2014)
  • Author(s): M. Sugiura, K. Atsumi, Y. Inoue, H. Mimura, T. Aoki, T. Nakano
  • Organizer: IEEE Nuclear Science symposium &Medical Imaging Conference; 21st Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors
  • Place of Presentation: Washington State Convention Center, Seattle, WA USA
  • Year and Date: 2014-11-08 – 2014-11-15
• [Presentation] Fabrication and Development of BGaN Device for the Novel Neutron Semiconductor Detector (2014)
  • Author(s): Takayuki Nakano, Yoku Inoue, Hidenori Mimura, Toru Aoki
  • Organizer: IEEE Nuclear Science symposium &Medical Imaging Conference; 21st Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors
  • Place of Presentation: Washington State Convention Center, Seattle, WA USA
  • Year and Date: 2014-11-08 – 2014-11-15
  • Invited
• [Presentation] abrication of BGaN semiconductor device for neutron detection (2014)
  • Author(s): Takayuki Nakano, Yoku Inoue, Hidenori Mimura, Toru Aoki
  • Organizer: The 21st International of The Society of Pure and Applied Coordination Chemistry (SPACC) Symposium
  • Place of Presentation: Kogakuin University, Shinjuku Campus、Shinjuku, Tokyo, Japan
  • Year and Date: 2014-10-31 – 2014-11-03
  • Invited
• [Presentation] BGaN成長における基板依存性の検討 (2014)
  • Author(s): 上山浩平，渥美勝浩，三村秀典，井上翼，青木徹，中野貴之
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学、北海道札幌市
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] GaNにおける放射線検出特性の実験的評価 (2014)
  • Author(s): 杉浦睦仁，久志本真希，光成正，山下康平，本田善央，天野浩，三村秀典，井上翼，青木徹，中野貴之
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学、北海道札幌市
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Improved BGaN epitaxial growth for the neutron detection device (2014)
  • Author(s): K. Ueyama, K. Atsumi, H. Mimura, Y. Inoue, T. Aoki and T. Nakano
  • Organizer: The 8th International Workshop on Nitride Semiconductors (IWN2014)
  • Place of Presentation: Wroclaw Congress Center, Wroclaw, Poland
  • Year and Date: 2014-08-24 – 2014-08-29
• [Presentation] BGaN 成長における基板および原料供給量の依存性評価 (2014)
  • Author(s): 上山浩平, 渥美勝浩, 三村秀典, 井上翼, 青木徹, 中野貴之
  • Organizer: 第6 回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学天白キャンパス、愛知県名古屋市
  • Year and Date: 2014-07-25 – 2014-07-26
• [Presentation] Improvement of BGaN epitaxial growth with controlled GaN substrate orientation (2014)
  • Author(s): K. Ueyama , K. Atsumi , H. Mimura , Y. Inoue , T. Aoki and T. Nakano
  • Organizer: 33th Electronic Materials Symposium (EMS33)
  • Place of Presentation: Laforret Suzenji, Izu, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Investigation of novel neutron detector by using BGaN semiconductor material (2014)
  • Author(s): Takayuki Nakano, Hidenori Mimura, Yoku Inoue, Toru Aoki
  • Organizer: The Third International Conference on Materials, Science and Environments (ICMEE’14)
  • Place of Presentation: Aqua Queen Kapiolani Hotel, Honolulu, Hawaii, USA
  • Year and Date: 2014-07-01 – 2014-07-03
  • Invited
• [Presentation] Ⅲ族窒化物半導体を用いた中性子半導体検出器の作製と結晶成長技術の開発 (2014)
  • Author(s): 中野貴之
  • Organizer: 第7回超領域研究会
  • Place of Presentation: 静岡大学浜松キャンパス、静岡県浜松市
  • Year and Date: 2014-06-20
  • Invited
• [Presentation] Examination of on the Influence of Boron Flow Rate and Substrate in BGaN Epitaxial Growth (2014)
  • Author(s): K.Ueyama, K. Atsumi, H. Mimura, Y. Inoue, T. Aoki, and T. Nakano
  • Organizer: the Second Conference on LED and Its Industrial Application (LEDIA '14)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Examination of on the Influence of Boron Flow Rate and Substrate in BGaN Epitaxial Growth (2014)
  • Author(s): K. Ueyama, K. Atsumi, H. Mimura, Y. Inoue, T. Aoki, and T. Nakano
  • Organizer: the Second Conference on LED and Its Industrial Application (LEDIA '14)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan
• [Presentation] Novel neutron detection system by using group-III nitride semiconductor (2014)
  • Author(s): Takayuki Nakano
  • Organizer: 2014 International Workshop on Advanced Nanovision Science
  • Place of Presentation: Shizuoka University, Japan
  • Invited
• [Presentation] 中性子検出半導体に向けたBGaN結晶の作製と検出特性の評価 (2013)
  • Author(s): 渥美勝浩
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学(厚木市)
  • Year and Date: 2013-03-29
• [Presentation] The Characteristic of Radiation Detection Property for GaN and BGaN (2013)
  • Author(s): Katsuhiro Atsumi, Hidenori Mimura, Yoku Inoue, Toru Aoki, Takayuki Nakano
  • Organizer: 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD)
  • Place of Presentation: COEX Convention Center, Seoul, Korea
• [Presentation] The proposal of the new material at the neutron detection semiconductor (2013)
  • Author(s): Takayuki Nakano, Katsuhiro Atsumi, Hidenori Mimura, Yoku Inoue, Toru Aoki
  • Organizer: 14th International Young Scientists Conference “Optics & High Technology Material Science –SPO 2013”
  • Place of Presentation: Kyiv, Ukraine
  • Invited
• [Presentation] The Characteristic of Radiation Detection Property for Group-III Nitride semiconductor (2013)
  • Author(s): Takayuki Nakano, Katsuhiro Atsumi, Hidenori Mimura, Yoku Inoue, Toru Aoki
  • Organizer: 12th International Conference on Global Research and Education (inter Academia 2013)
  • Place of Presentation: University of Sofia St. Kliment Ohridski, Sofia, Bulgaria
• [Presentation] Design and development of semiconductor neutron detector (2013)
  • Author(s): Toru Aoki, Akifumi Koike, Hisashi Morii, Volodymyr A Gnatyuk, Takayuki Nakano and Hidenori Mimura
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha University, Kyoto, Japan
• [Presentation] New neutron detector by using semiconductor BGaN (2013)
  • Author(s): Katsuhiro Atsumi, Kosugi Naohumi, Aki Miyake, Hidenori Mimura, Yoku Inoue, Toru Aoki, Takayuki Nakano
  • Organizer: 2013 SPIE Optics + Photonics
  • Place of Presentation: San Diego Convention Center, San Diego, California, USA
• [Presentation] Investigation of neutron semiconductor detector by using BGaN (2013)
  • Author(s): [14] Takayuki Nakano, Katsuhiro Atsumi, Hisashi Kaneko, Hidenori Mimura, Yoku Inoue, Toru Aoki
  • Organizer: 2013 MRS Spring Meeting
  • Place of Presentation: San Francisco, California, USA
• [Presentation] The evaluation of radiation detection for GaN and BGaN (2013)
  • Author(s): [29] K. Atsumi, A. Miyake, Y. Inoue, H. Mimura, T. Aoki and T. Nakano
  • Organizer: 32th Electronic Materials Symposium (EMS32)
  • Place of Presentation: Laforret Biwako, Shiga
• [Presentation] ”中性子半導体検出器の実現に向けたBGaN薄膜の作製と評価” (2013)
  • Author(s): [32] 渥美勝浩、三宅亜紀、三村秀典、井上翼、青木徹、中野貴之
  • Organizer: 2013年度電子情報通信学会ED/CPM/SDM合同5月研究会
  • Place of Presentation: 静岡大学浜松キャンパス
• [Presentation] Investigation of radiation detection which used BGaN (2012)
  • Author(s): Katsuhiro Atsumi
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo Convention Center, (Sapporo, Japan)
  • Year and Date: 2012-10-15
• [Presentation] 中性子検出半導体に向けたBGaNの結晶成長と評価 (2012)
  • Author(s): 渥美勝浩
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(松山市)
  • Year and Date: 2012-09-12
• [Presentation] GaN based semiconductor neutron detector (2012)
  • Author(s): Toru Aoki
  • Organizer: 2012 SPIE Optics + Photonics
  • Place of Presentation: San Diego Convention Center, San Diego, (California, USA)
  • Year and Date: 2012-08-14
• [Presentation] The research on the possibility of the novel neutron detector using BGaN (2012)
  • Author(s): Katsuhiro Atsumi
  • Organizer: 31th Electronic Materials Symposium (EMS31)
  • Place of Presentation: Laforret Suzenji, (Izu, Japan)
  • Year and Date: 2012-07-11
• [Remarks] 研究室HP
  • URL: http://nakanolab.eng.shizuoka.ac.jp/index.html
• [Remarks] 静岡大学中野研
  • URL: http://nakanolab.eng.shizuoka.ac.jp/index.html
• [Remarks] 静岡大学大学院工学研究科電子物質科学専攻中野研究室
  • URL: http://nakanolab.eng.shizuoka.ac.jp/index.html