Atomic-scale flattening of Ge surfaces free from metallic contamination by a flat catalyst to enhance oxygen reduction reactions in water
| Project/Area Number |
24686020
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
ARIMA KENTA 大阪大学, 工学(系)研究科(研究院), 准教授 (10324807)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2014: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
Fiscal Year 2013: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2012: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Keywords | エッチング / 半導体プロセス / 触媒反応 / グラフェン / 表面工学 / 超精密加工 / 生産工学 / ナノ材料 / 表面科学 / 酸素還元 / ゲルマニウム表面 / 酸素還元触媒 / 半導体表面 / 平坦化 |
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| Outline of Final Research Achievements |
I am aiming at developing a surface creation process in water to flatten a Ge surface free from metallic contamination. In this research period, I have obtained the results shown below.
(1) I confirmed that nitrogen (N) atoms can be doped in graphene by a thermal treatment in a mixed NH3/Ar gas. (2) I performed electrochemical measurements. It was demonstrated that the catalytic activity of N-doped graphene to enhance O2 reduction reactions is in between those of Pt and a carbon bulk. (3) Graphene particles were deposited on a Ge surface, and this sample was immersed in water with dissolved O2 molecules. I found that a Ge surface around the deposited graphene particles was selectively etched. This is owing to the catalytic activity of graphene.
These results are important and essential to continue further experiments.
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Report
(5 results)
Research Products
(50 results)
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[Journal Article] Ambient-Pressure XPS Study of GeO2/Ge(100) and SiO2/Si(100) at Controlled Relative Humidity2014
Author(s)
Kenta Arima, Yoshie Kawai, Yuya Minoura, Yusuke Saito, Daichi Mori, Hiroshi Oka, Kentaro Kawai, Takuji Hosoi, Zhi Liu, Heiji Watanabe, and Mizuho Morita
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Journal Title
ECS Transactions
Volume: 64
Issue: 8
Pages: 77-82
DOI
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[Presentation] Ambient-Pressure XPS Study of GeO2/Ge(100) and SiO2/Si(100) at Controlled Relative Humidity2014
Author(s)
Kenta Arima, Yoshie Kawai, Yuya Minoura, Yusuke Saito, Daichi Mori, Hiroshi Oka, Kentaro Kawai, Takuji Hosoi, Zhi Liu, Heiji Watanabe, and Mizuho Morita
Organizer
226th Meeting of The Electrochemical Society
Place of Presentation
Cancun, Mexico
Year and Date
2014-10-06
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