Current injection at the graphene/metal interface with the large difference in DOSs
| Project/Area Number |
24686039
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAGASHIO Kosuke 東京大学, 工学(系)研究科(研究院), 准教授 (20373441)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2013: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2012: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Keywords | グラフェン / コンタクト抵抗 / 状態密度 / コンタクト / 化学結合 / 物理吸着 / 電界効果トランジスタ |
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| Outline of Final Research Achievements |
In order to reduce the contact resistance at the metal/graphene interface, it is important to increase the density of states in graphene. In this study, the density of states of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure. The density of states of graphene in the contact structure is correlated with the contact resistivity meas-ured using devices fabricated by the resist-free process.
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Report
(4 results)
Research Products
(42 results)
