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Current injection at the graphene/metal interface with the large difference in DOSs

Research Project

Project/Area Number 24686039
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypePartial Multi-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

NAGASHIO Kosuke  東京大学, 工学(系)研究科(研究院), 准教授 (20373441)

Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2013: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2012: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Keywordsグラフェン / コンタクト抵抗 / 状態密度 / コンタクト / 化学結合 / 物理吸着 / 電界効果トランジスタ
Outline of Final Research Achievements

In order to reduce the contact resistance at the metal/graphene interface, it is important to increase the density of states in graphene. In this study, the density of states of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure. The density of states of graphene in the contact structure is correlated with the contact resistivity meas-ured using devices fabricated by the resist-free process.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (42 results)

All 2015 2014 2013 2012 Other

All Journal Article (12 results) (of which Peer Reviewed: 10 results,  Acknowledgement Compliant: 2 results) Presentation (24 results) (of which Invited: 12 results) Book (3 results) Remarks (3 results)

  • [Journal Article] Large Fermi level modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators2014

    • Author(s)
      K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 104 Issue: 8 Pages: 083519-083519

    • DOI

      10.1063/1.4867202

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Quantum capacitance measurement of bilayer graphene2014

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Journal Title

      ECS Trans.

      Volume: 61 Issue: 3 Pages: 75-75

    • DOI

      10.1149/06103.0075ecst

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Carrier density modulation in graphene underneath the Ni electrode2013

    • Author(s)
      T. Moriyama, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      J. Appl. Phys

      Volume: 114 Issue: 2 Pages: 24503-24503

    • DOI

      10.1063/1.4813216

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity2013

    • Author(s)
      R.Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 103 Issue: 3 Pages: 33514-33514

    • DOI

      10.1063/1.4815990

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct observation of charge transfer region at interfaces in graphene devices2013

    • Author(s)
      Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, and Akira Toriumi
    • Journal Title

      Applied Physics Letters

      Volume: 102 Issue: 24 Pages: 241604-241604

    • DOI

      10.1063/1.4808083

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement2013

    • Author(s)
      K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102 Issue: 17 Pages: 173507-173507

    • DOI

      10.1063/1.4804430

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement2013

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Journal Title

      IEEE International Electron Device Meeting (IEDM) Tech. Dig.

      Volume: na Pages: 503-503

    • DOI

      10.1109/iedm.2013.6724661

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 本質的なグラフェン/金属界面特性2013

    • Author(s)
      長汐晃輔,井福亮太,森山喬史,西村知紀,鳥海明
    • Journal Title

      応用物理学会分科会シリコンテクノロジー

      Volume: 154 Pages: 15-18

    • Related Report
      2013 Annual Research Report
  • [Journal Article] グラフェン/金属コンタクト形成に対する理解と制御2013

    • Author(s)
      長汐晃輔,鳥海明
    • Journal Title

      応用物理学会分科会シリコンテクノロジー

      Volume: 158 Pages: 18-21

    • Related Report
      2013 Annual Research Report
  • [Journal Article] グラフェン/Si02基板相互作用に対する理解と制御2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Journal Title

      表面科学

      Volume: 33 Issue: 10 Pages: 552-556

    • DOI

      10.1380/jsssj.33.552

    • NAID

      130004486705

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] グラフェンFETの界面に対する理解と制御2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Journal Title

      電子情報通信学会誌

      Volume: 95 Pages: 284-284

    • NAID

      110009437459

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Intrinsic graphene/metal contact2012

    • Author(s)
      K. Nagashio, R. Ifuku, T. Moriyama, I. Nishimura and A Toriumi
    • Journal Title

      IEDM Tech. Dig.

      Pages: 68-71

    • NAID

      110009728053

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014

    • Author(s)
      K. Nagashio
    • Organizer
      45th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Bahia Resort Hotel, SaDiego,USA
    • Year and Date
      2014-12-05
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] グラフェンFETの実現へ向けて –コンダクタンス法によるギャップ内準位解析-2014

    • Author(s)
      長汐晃輔
    • Organizer
      第9回ATI合同研究会
    • Place of Presentation
      東北大学東京分室(東京都千代田区)
    • Year and Date
      2014-11-26
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Energy gap formation & gap states analysis in bilayer graphene2014

    • Author(s)
      K. Nagashio
    • Organizer
      Indo-Japan program on Graphene and related materials
    • Place of Presentation
      JNCASR, Bangalore, India
    • Year and Date
      2014-11-05
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Energy gap formation and gap states analysis in bilayer graphene under the ultra-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      Japan-Korea Joint Symposium on Semiconductor Physics and Technology
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2014-09-17
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] semiconducting properties in bilayer graphene under the ultara-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      IEEE INEC2014
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2014-07-29
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 2層グラフェンにおけるギャップ内のキャリア応答と高キャリア密度下でのサブバンド散乱2014

    • Author(s)
      長汐晃輔
    • Organizer
      日本表面科学会 第82回表面科学研究会
    • Place of Presentation
      東工大(東京都目黒区)
    • Year and Date
      2014-07-25
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 電界印加による2層グラフェンのギャップ形成2014

    • Author(s)
      長汐晃輔
    • Organizer
      第78回半導体・集積回路技術シンポジウム
    • Place of Presentation
      東京理科大学(東京都新宿区)
    • Year and Date
      2014-07-17
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 2層グラフェンの外部電界印加によるギャップ形成とギャップ内準位の評価2014

    • Author(s)
      長汐晃輔
    • Organizer
      学振専門委員会
    • Place of Presentation
      東京大学(東京都文京区)
    • Year and Date
      2014-06-10
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Quantum capacitance measurement of bilayer graphene2014

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Organizer
      225rd ECS meeting
    • Place of Presentation
      Orlando,USA
    • Year and Date
      2014-05-12
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 金属と接触したグラフェンの量子容量測定による状態密度の抽出と結合機構の解明2013

    • Author(s)
      井福亮太, 長汐晃輔, 西村知紀, 鳥海明
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      厚木市・神奈川工科大学
    • Year and Date
      2013-03-29
    • Related Report
      2012 Annual Research Report
  • [Presentation] レジストフリーコンタクト形成プロセスに基づくグラフェンの金属界面の理解2013

    • Author(s)
      長汐晃輔, 井福亮太, 森山喬史, 西村知紀 鳥海明
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      厚木市・神奈川工科大学
    • Year and Date
      2013-03-29
    • Related Report
      2012 Annual Research Report
  • [Presentation] Metal/Graphene contact2013

    • Author(s)
      K. Nagashio
    • Organizer
      4th A3 symp. on emerging materials
    • Place of Presentation
      Jeju, Korea
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Intrinsic graphene/metal contact2012

    • Author(s)
      K. Nagashio, R. Ifuku, T. Morivama T Nishimura and A
    • Organizer
      EEE International Electron Device Meeting
    • Place of Presentation
      米国・サンフランシスコ(招待講演)
    • Year and Date
      2012-12-10
    • Related Report
      2012 Annual Research Report
  • [Presentation] グラフェンデバイスにおける界面の理解と制御2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      第32回表面科学学術講演会シンポジウム講演
    • Place of Presentation
      仙台市・東北大学(招待講演)
    • Year and Date
      2012-11-21
    • Related Report
      2012 Annual Research Report
  • [Presentation] Estimaon of Metal-graphene Interaction Strength Through Quantum Capacitance Extraction of Graphene in Contact with Metal2012

    • Author(s)
      R. Ifuku, K. Nagashio, T. Nishimura and A Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      京都市・国際会議場
    • Year and Date
      2012-09-26
    • Related Report
      2012 Annual Research Report
  • [Presentation] Estimation of Metal-graphene Interaction Strength Through Quanium Capacitance Extraction of Graphene in Contact with Metal2012

    • Author(s)
      T. Moriyama, K. Nagashio, T. Nishimura and A Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      京都市・国際会議場
    • Year and Date
      2012-09-26
    • Related Report
      2012 Annual Research Report
  • [Presentation] 金属電極直下のグラフェンは本当にグラフェンか?2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      筑波大学プレ戦略イニシアティブ講演会
    • Place of Presentation
      つくば市・筑波大学(招待講演)
    • Year and Date
      2012-08-07
    • Related Report
      2012 Annual Research Report
  • [Presentation] Electrical transport properties of graphene in contact with Ni2012

    • Author(s)
      T. Moriyama, K. Nagashio, T. Nishimura and A Toriumi
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      米国・サンフランシスコ
    • Year and Date
      2012-04-10
    • Related Report
      2012 Annual Research Report
  • [Presentation] グラフェン/金属コンタクトの理解と制御

    • Author(s)
      長汐晃輔
    • Organizer
      グラフェンコンソーシアム第2回研究講演会
    • Place of Presentation
      秋葉原,東京
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Si集積化の限界を超える –グラフェンFET実現へ向けて-

    • Author(s)
      長汐晃輔
    • Organizer
      SEMI FORUM
    • Place of Presentation
      グランキューブ大阪,大阪
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Estimation of DOS in graphene in contact with metals by quantum capacitance measurment

    • Author(s)
      K. Nagashio, R. Ifuku, T. Nishimura, and A. Toriumi
    • Organizer
      The 40th Int. Symp. on Compound Semiconductors
    • Place of Presentation
      Kove convention center, Hyogo
    • Related Report
      2013 Annual Research Report
  • [Presentation] DOS estimation of graphene in the contact structre by quantum capacitance measurment

    • Author(s)
      K. Nagashio, R. Ifuku, T. Nishimura and A. Toriumi
    • Organizer
      RPGR2013
    • Place of Presentation
      Tokyo Tech Front, Tokyo
    • Related Report
      2013 Annual Research Report
  • [Presentation] Quantum capacitance measurements in monolayer & bilayer graphene

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura and A. Toriumi
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha University, Kyoto
    • Related Report
      2013 Annual Research Report
  • [Presentation] Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Organizer
      IEEE International Electron Device Meeting (IEDM)
    • Place of Presentation
      Washington, D.C., USA
    • Related Report
      2013 Annual Research Report
  • [Book] Frontiers of graphene and carbon nanotubes2015

    • Author(s)
      K. Nagashio, A. Toriumi
    • Total Pages
      25
    • Publisher
      Springer
    • Related Report
      2014 Annual Research Report
  • [Book] グラフェンの最先端技術と拡がる応用2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Publisher
      フロンティア出版
    • Related Report
      2012 Annual Research Report
  • [Book] グラフェンの機能と応用展望II2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Publisher
      フロンティア出版
    • Related Report
      2012 Annual Research Report
  • [Remarks] 東京大学マテリアル工学専攻 長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2014 Annual Research Report
  • [Remarks] 東京大学マテリアル工学専攻長汐研究室

    • Related Report
      2013 Annual Research Report
  • [Remarks]

    • URL

      http://www.adam.t.u-tokyo.ac.jp/top.html

    • Related Report
      2012 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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