| Budget Amount *help |
¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2013: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2012: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
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| Outline of Final Research Achievements |
In this research, we aimed at fabrication of new Fe-based ferromagnetic semiconductors and development of new spin-devices utilizing them. The major results are as follows. First, we successfully fabricated (1) the world’s first n-type electron-induced ferromagnetic semiconductor (In,Fe)As. We observed (2) the quantum-size effect in quantum wells with ultrathin (In,Fe)As layers. We successfully controlled ferromagnetism by controlling the overlapping between Fe atoms and electron wavefunctions in spin-transistor structures with (In,Fe)As quantum wells for the first time. We then fabricated (3) a new p-type ferromagnetic semiconductor (Ga,Fe)Sb, and improved the Curie temperature of this material up to 230 K, which is the highest value ever reported for intrinsic ferromagnetic semiconductors. Our results indicate that Fe-based ferromagnetic semiconductors are very promising materials for semiconductor spintronics.
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