Fe-based carrier-induced ferromagnetic semiconductors and their applications to next-generation spin devices
| Project/Area Number |
24686040
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology (2014)
The University of Tokyo (2012-2013) |
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Principal Investigator |
PHAM NAM HAI 東京工業大学, 理工学研究科, 准教授 (50571717)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2013: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2012: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
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| Keywords | 強磁性半導体 / 量子効果 / スピントロ二クス / キャリア誘起強磁性 / スピントランジスタ / Fe-As |
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| Outline of Final Research Achievements |
In this research, we aimed at fabrication of new Fe-based ferromagnetic semiconductors and development of new spin-devices utilizing them. The major results are as follows. First, we successfully fabricated (1) the world’s first n-type electron-induced ferromagnetic semiconductor (In,Fe)As. We observed (2) the quantum-size effect in quantum wells with ultrathin (In,Fe)As layers. We successfully controlled ferromagnetism by controlling the overlapping between Fe atoms and electron wavefunctions in spin-transistor structures with (In,Fe)As quantum wells for the first time. We then fabricated (3) a new p-type ferromagnetic semiconductor (Ga,Fe)Sb, and improved the Curie temperature of this material up to 230 K, which is the highest value ever reported for intrinsic ferromagnetic semiconductors. Our results indicate that Fe-based ferromagnetic semiconductors are very promising materials for semiconductor spintronics.
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Report
(4 results)
Research Products
(56 results)
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[Journal Article] Spin and orbital magnetic moments of Fe in the n-type ferromagnetic semiconductor (In,Fe)As2014
Author(s)
M. Kobayashi, L. D. Anh, P. N. Hai, Y. Takeda, S. Sakamoto, T. Kadono, T. Okane, Y. Saitoh, H. Yamagami, Y. Harada, M. Oshima, M. Tanaka and A. Fujimori
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Journal Title
Applied Physics Letters
Volume: 105
Issue: 3
DOI
Related Report
Peer Reviewed
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[Presentation] Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism2014
Author(s)
Shoya Sakamoto, Anh Le Duc, Hai Pham Nam, Goro Shibata, Yukio Takahashi, Yukiharu Takeda, Masaki Kobayashi, Tsuneharu Koide, Masaaki Tanaka, Atsushi Fujimori
Organizer
第75回応用物理学会秋期学術講演会
Place of Presentation
北海道大学（北海道札幌市）
Year and Date
2014-09-17 – 2014-09-20
Related Report
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[Presentation] 強磁性半導体(In,Fe)AsのXMCD測定2013
Author(s)
坂本祥哉, 小林正起, 芝田悟朗, 高橋文雄, 藤森淳, 小出常晴, 竹田幸治, 山上浩志, 斎藤祐児, Le Duc Anh, Pham Nam Hai, 田中雅明
Organizer
日本物理学会2013年秋季大会
Place of Presentation
徳島大学、徳島県
Related Report
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[Presentation] XMCD measurements of ferromagnetic semiconductor (In,Fe)As2013
Author(s)
S. Sakamoto, M. Kobayashi, G. Shibata, Y. Takahashi, A. Fujimori, T. Koide, Y. Takeda, Y. Saitoh, H. Yamagami, L. D. Anh, P. N. Hai, and M. Tanaka
Organizer
第18回半導体スピン工学の基礎と応用（PASPS-18）
Place of Presentation
大阪大学豊中キャンパス、大阪府
Related Report
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