LD fabrication on semipolar GaN/Si by induced pressure InGaN growth and strain control
Project/Area Number |
24686041
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Partial Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | Nagoya University |
Principal Investigator |
HONDA YOSHIO 名古屋大学, 工学(系)研究科(研究院), 准教授 (60362274)
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Research Collaborator |
KUSHIMOTO Maki
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Project Period (FY) |
2012-04-01 – 2015-03-31
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Project Status |
Completed (Fiscal Year 2014)
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Budget Amount *help |
¥27,170,000 (Direct Cost: ¥20,900,000、Indirect Cost: ¥6,270,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2012: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
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Keywords | Si / InGaN / GaN / レーザ / 半極性面 / Si基板 / レーザー / 加圧MOVPE / MOVPE / レーザー構造 |
Outline of Final Research Achievements |
In this study, we focus on the fabrication of the LD from blue to green region, by using semipolar GaN which could eliminate the internal polarization(piezo polarization). We could get semipolar GaN on patterned Si substrate with stripe shape. GaN and InGaN was taken the large stress due to the difference of the thermal expansion coefficient. In this structure, it was tensile stress along the stripe direction, on the other hand, it was compressive perpendicular direction. We found that InGaN luminous polarization direction was controlled to c axis direction owing to this stress. We made the laser structure on this structure and measured the optical property under high optical excitation condition. As a result, we confirm the stimulate emission from edge of the sample.
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Report
(4 results)
Research Products
(16 results)
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[Presentation] 加圧MOVPEによるInGaN結晶成長2012
Author(s)
本田善央, 坂倉誠也, 土井友博, 谷川智之, 山口雅史, 天野
Organizer
日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第4回 窒化物半導体結晶成長講演会
Place of Presentation
東京
Year and Date
2012-04-28
Related Report
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