| Budget Amount *help |
¥27,170,000 (Direct Cost: ¥20,900,000、Indirect Cost: ¥6,270,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2012: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
|
|---|
| Outline of Final Research Achievements |
In this study, we focus on the fabrication of the LD from blue to green region, by using semipolar GaN which could eliminate the internal polarization(piezo polarization). We could get semipolar GaN on patterned Si substrate with stripe shape. GaN and InGaN was taken the large stress due to the difference of the thermal expansion coefficient. In this structure, it was tensile stress along the stripe direction, on the other hand, it was compressive perpendicular direction. We found that InGaN luminous polarization direction was controlled to c axis direction owing to this stress. We made the laser structure on this structure and measured the optical property under high optical excitation condition. As a result, we confirm the stimulate emission from edge of the sample.
|
