| Budget Amount *help |
¥26,520,000 (Direct Cost: ¥20,400,000、Indirect Cost: ¥6,120,000)
Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2013: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
Fiscal Year 2012: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
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| Outline of Final Research Achievements |
Diamond is a semiconductor material for the next-generation power devices. The purpose of this study was to create the novel device performances for the realization of ultra-energy saving by elevating its material and process techniques. In this study, we succeeded in the development of the growth techniques of high-quality p-type diamond films, the realization of delta-doped diamond with ultralow resistivity, and the fabrication of diamond MOS structures with high-quality Al2O3/diamond interfaces.
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