| Budget Amount *help |
¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2013: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2012: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
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| Outline of Final Research Achievements |
Thermoelectric materials which convert heat energy to electric energy attract great attention due to the efficient use of limited energy sources. Recently, Drastic improvement in the thermoelectric properties were expected by the quantum well structures. In the present study, by controlling the stacking fault formation in SiC crystal, we attempted to form the quantum well structure in the bulk semiconductors.
By the addition of nitrogen in SiC, cubic-type stacking faults are introduced to the hexagonal SiC crystal. The stacking fault would be quantum-well because the band-gap energy of cubic SiC is smaller than that of hexagonal SiC.
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