| Budget Amount *help |
¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2012: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
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| Outline of Final Research Achievements |
To determine the interfacial phenomena at the SiC-solution interface during solution growth of single crystalline SiC, observation and measurement techniques of high temperature interface has been established, and then growth behavior was investigated.
At first, white color and single color laser lights were irradiated through seed crystal, and the reflected lights at the interface were captured. 2-dimenstional observation of the interface structure composed of 10-100nm height and t measurement of step height with 2 nm have been achieved. Then, interfacial observation was conducted for various conditions, and effect of temperature condition and solvent system on the interfacial structure was examined. The difference of the step stability when using Si, Si-Cr, Fe-Si solvents was demonstrated. Furthermore, the nucleation of 3C-SiC on 4H-SiC substrate was directly observed and the mechanism of different poly-type formation was suggested.
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