| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Research Abstract |
Ferroelectric materials possess macroscopic polarization without external field. The spontaneous polarization in ferroelectrics causes bulk-photovoltaic effects: charge separation of photoexcited carriers occurs due to depolarization field, which results in photovoltage along the spontaneous polarization. In this study, the photocarrier recombination and relaxation dynamics in ferroelectric semiconductor BiFeO3 thin films by means of time-resolved transient absorption and photocurrent spectroscopy. This study revealed that photocarriers are trapped into shallow impurity state and the trapped carriers have long lifetimes. The long-lived carriers are related to the large photovoltage in BiFeO3 thin films.
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