Perpendicular magnetic anisotropy enhanced by tuning electronic structure of organic-semiconductor/metallic-magnet interface
| Project/Area Number |
24750120
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Functional materials chemistry
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| Research Institution | Tohoku University |
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Principal Investigator |
ZHANG Xianmin 東北大学, 原子分子材料科学高等研究機構, 助教 (60580347)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 電気・磁気的機能 / トンネル接合 / 有機半導体 / 金属磁性体 / 磁気抵抗効果 / スピントロニクス / 電子状態 / 垂直磁気異方性 / 電圧誘起磁性 / 界面磁性 / 有機スピンバルブ |
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| Research Abstract |
We have studied the effect of molecules/magnetic materials interface interactions on magnetic properties, such as coercivity, magnetization and so on. Importantly, it was found that the coercivity of Co film was 40, 30, 15 and 640 Oe when deposited on C60, Alq3, and Rubrene molecular films, respectively. This reflects the different electronic couplings at the interface of ferromagnetic metal with different molecules. Based on these results, we developed the organic spin valve device and obtained one of the highest magnetoresistance ratio (5% for C60 and 8% for Alq3 based spin valve) at room temperature reported so far.
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Report
(3 results)
Research Products
(15 results)
