Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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Research Abstract |
It is desired that a spin-injector material with a high efficiency for developing semiconductor devices with multi-functionality. In this study, Mn-Ga films with high perpendicular magnetic anisotropy were investigated for depositing onto single crystal Si substrate. In addition, spin dependent transport property of the Mn-compounds was investigated, and it is discovered that tunneling spin polarization can be increased by optimizing the interface. A Mn-Ga film with an L1_0 ordered phase was also successfuly fabricated onto single crystalline Si(100) substrate.
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