Spin-injection using perpendicularly magnetized thin films
Project/Area Number |
24760003
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Tohoku University |
Principal Investigator |
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Project Period (FY) |
2012-04-01 – 2014-03-31
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Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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Keywords | 垂直磁化薄膜 / MnGa / Mn合金 / スピントロニクス / 磁気異方性 |
Research Abstract |
It is desired that a spin-injector material with a high efficiency for developing semiconductor devices with multi-functionality. In this study, Mn-Ga films with high perpendicular magnetic anisotropy were investigated for depositing onto single crystal Si substrate. In addition, spin dependent transport property of the Mn-compounds was investigated, and it is discovered that tunneling spin polarization can be increased by optimizing the interface. A Mn-Ga film with an L1_0 ordered phase was also successfuly fabricated onto single crystalline Si(100) substrate.
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Report
(3 results)
Research Products
(19 results)
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[Presentation] Magnetoresistance effect in MnxGa100-x/FM(FM=Fe, Co, CoFeB)/MgO/CoFeB perpendicular magnetic tunnel junctions with different MnGa composition2013
Author(s)
Q. Ma, T. Kubota, S. Mizukami, X. Zhang, H. Naganuma, M. Oogane, Y. Ando, and T. Miyazaki
Organizer
12th Joint MMM-INTERMAG conference
Place of Presentation
Chicago, USA
Related Report
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