Study of the spin-pumping-induced spin transport in silicon and germanium at room temperature
| Project/Area Number |
24760010
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka City University (2013)
Osaka University (2012) |
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Principal Investigator |
SHIKOH Eiji 大阪市立大学, 工学(系)研究科(研究院), 准教授 (90377440)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | スピントロニクス / スピンポンピング / 逆スピンホール効果 |
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| Research Abstract |
For more integration of semiconductor devices, a study for development of the beyond-CMOS technology was carried out from the viewpoint of spintronics. In this study, the achievement of room-temperature-spin-transport in the p-type Si, p-type Ge and n-type Ge with spin injection by using the spin-pumping and with spin detection by using the inverse spin-Hall effect in the non-magnetic metal attached to the target materials was focused.
In this study, the spin-pumping-induced spin transport in the p-Si at room temperature was demonstrated. Also, spin injection into the p-Ge was achieved. These results were suggested that the evaluation method of the spin transport in this study was able to be applied to almost all solid-state materials, and the room temperature spin transport in aluminum or graphene was successfully demonstrated as good examples with this method.
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Report
(3 results)
Research Products
(26 results)
