Development of high-temperature growth technique for high-quality GaN ingots
| Project/Area Number |
24760011
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
IMADE MAMORU 大阪大学, 工学(系)研究科(研究院), 助教 (40457007)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 窒化ガリウム / 酸化ガリウム / 高温成長 / 高速成長 / 結晶工学 / 結晶成長 / 半導体物性 / 窒化ｶﾞﾘｳﾑ / 酸化ｶﾞﾘｳﾑ |
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| Research Abstract |
High-temperature growth technique for high-quality GaN ingots have been developed. In this study, progresses as follows have been obtained. (1)High-temperature growth, H2 carrier gas and optimization of surface state of seed crystals enabled to increase the growth rate (180um/h) and improve crystallinity. (2)New reaction between Ga metal and H2O vapor for synthesizing Ga2O vapor has been developed to perform the long-term growth. (3)New CVD gas flow pattern has been developed by the fluid calculation. By using this new pattern, 400um-thick GaN crystals could be obtained.
These results indicate that the high-temperature GaN growth technique using Ga2O vapor, which has been developed in this research, is useful for fabricating high-quality GaN ingots.
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Report
(3 results)
Research Products
(44 results)
