Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template

• Project/Area Number: 24760012
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Yamaguchi University
• Principal Investigator: OKADA Narihito 山口大学, 理工学研究科, 助教 (70510684)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 発光ダイオード / 窒化ガリウムインジウムテンプレート / 偏光特性 / LED / 非極性面 / InGaN / 高効率化 / seimpolar / Nitiride / InGaN underlying layer

Research Abstract

This research project aims to fabricate and evaluate light-emitting diodes (LEDs) grown on a semipolar InGaN template enabling to realize state-of-the-art LED. Efficiency of a liquid crystal display using LEDs and laser diodes (LDs) can be improved by controlling light-polarization characteristics; it was revealed that the semipolar InGaN templates can control the light-polarization for the LEDs and LDs. Although LEDs recently have a problem of efficiency droop at a high-injection current, InGaN template is also effective to enhance the light output power of LED. The light output power of the LED fabricated on the InGaN template is approximately 6 times higher than that of a conventional LED at a high injection current.

Research Products

• [Journal Article] Generation of dislocation clusters by glide m-planes in semipolar GaN layers (2014)
  • Author(s): N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, and H. T. Grahn
  • Journal Title: Phys. Stat. Solidi (a) Volume: 211, No. 4 Issue: 4 Pages: 736-739
  • DOI: 10.1002/pssa.201300465
  • Peer Reviewed
• [Journal Article] Growth of semipolar {11-22} GaN using SiNx intermediate layer by hydride vapor phase epitaxy (2014)
  • Author(s): M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo
  • Journal Title: Phys. Stat. Solidi (c) Volume: 11, No. 3-4 Issue: 3-4 Pages: 557-560
  • DOI: 10.1002/pssc.201300520
  • Peer Reviewed
• [Journal Article] Characterization of semipolar {11-22} light-emitting diodes using a hole blocking layer (2014)
  • Author(s): K. Nakao, M. Haziq, Y. Okamura, K. Yamane, N. Okada, and K. Tadatomo
  • Journal Title: Phys. Stat. Solidi (c) Volume: 11, No. 3-4 Issue: 3-4 Pages: 775-777
  • DOI: 10.1002/pssc.201300511
  • Peer Reviewed
• [Journal Article] Evaluation of {11-22} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions (2013)
  • Author(s): K. Uchida, S. Miyoshi1, K. Yamane, N. Okada, K. Tadatomo, and N. Kuwano
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52 Issue: 8S Pages: 08JC07-08JC07
  • DOI: 10.7567/jjap.52.08jc07
  • Peer Reviewed
• [Journal Article] Self-separated large freestanding semipolar {11-22} GaN films using r-plane patterned sapphire substrates (2013)
  • Author(s): H. Furuya, K. Yamane, N. Okada, and K. Tadatomo
  • Journal Title: Jpn. J. Appl. Phys. 52 Volume: 52 Issue: 8S Pages: 08JA09-08JA09
  • DOI: 10.7567/jjap.52.08ja09
• [Journal Article] Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy (2013)
  • Author(s): K. Yamane
  • Journal Title: Proc. of SPIE Volume: 8625 Pages: 8625031-7
  • DOI: 10.1117/12.2007376
  • Peer Reviewed
• [Journal Article] Evaluation of {11-22} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions (2013)
  • Author(s): Katsumi Uchida, Seita Miyoshi, Keisuke Yamane, Narihito Okada, Kazuyuki Tadatomo, and Noriyuki Kuwano
  • Journal Title: JJAP Volume: -
  • Peer Reviewed
• [Presentation] Evaluation of the Optical Polarization Properties in Semi-Polar {11-22} LEDs (2014)
  • Author(s): Y. Okamura, K. Nakao, N. Okada, K. Yamane, and K. Tadatomo
  • Organizer: Conference on LED and Its Industrial Application'14 (LEDIA'14)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan(Oral presentation)(LED4-12)
• [Presentation] Relationship between V-Pit Diameter and Potential Barrier Height in InGaN Based Light-Emitting Diodes (2014)
  • Author(s): N. Okada, M. Haziq, K. Yamane, Y. Yamada, and K. Tadatomo
  • Organizer: Conference on LED and Its Industrial Application'14 (LEDIA'14)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan(Oral presentation)( LED4-14)
• [Presentation] Fabrication of InGaN Based Light-Emitting Diode Using Freestanding {20-21} GaN Substrate (2014)
  • Author(s): Y. Denpo, Y. Mitsui, K. Yamane, N. Okada, and K. Tadatomo
  • Organizer: Conference on LED and Its Industrial Application'14 (LEDIA'14)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan(Poster presentation)(LEDp6-22)
• [Presentation] 自立{20-21}GaN基板を用いたInGaN系LED構造の作製 (2014)
  • Author(s): 傳寶裕晶,光井勇祐,山根啓輔,岡田成仁,只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学,神奈川県(20a-PG1-10)
• [Presentation] HVPEの成長条件が厚膜{20-21} GaNの結晶性に与える影響 (2014)
  • Author(s): 橋本健宏,山根啓輔,岡田成仁,只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学,神奈川県(18p-E13-10)
• [Presentation] ハイドライド気相成長法による半極性面GaNの再成長 (2014)
  • Author(s): 稲垣卓志,橋本健宏,山根啓輔,岡田成仁,只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学,神奈川県(18p-E13-9)
• [Presentation] ハイドライド気相成長法を用いた成長条件の最適化による半極性面{11-22}GaNの基底面積層欠陥の低減 (2014)
  • Author(s): 上野元久,山根啓輔,岡田成仁,只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学,神奈川県(18p-E13-8)
• [Presentation] 自立{20-21}GaN基板を用いたInGaN系LED構造の作製 (2014)
  • Author(s): 傳寶裕晶, 光井勇祐, 山根啓輔, 岡田成仁, 只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学（東京都渋谷区）
• [Presentation] HVPEの成長条件が厚膜{20-21} GaNの結晶性に与える影響 (2014)
  • Author(s): 橋本健宏，山根啓輔，岡田成仁，只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学（東京都渋谷区）
• [Presentation] ハイドライド気相成長法による半極性面GaNの再成長 (2014)
  • Author(s): 稲垣卓志, 橋本健宏, 山根啓輔, 岡田成仁, 只友一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学（東京都渋谷区）
• [Presentation] ハイドライド気相成長法を用いた成長条件の最適化による半極性面{11-22}GaNの基底面積層欠陥の低減 (2014)
  • Author(s): 上野 元久，山根 啓輔, 岡田 成仁, 只友 一行
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学（東京都渋谷区）
• [Presentation] プラズモン効果を目指した薄膜p層を有するInGaN系LEDの作製 (2014)
  • Author(s): 塚田哲朗, 山根啓輔, 岡田成仁, 只友一行, 立石和隆，岡本晃一
  • Organizer: 2014年春季第61回応用物理学会関係連合学術講演会
  • Place of Presentation: 青山学院大学（東京都渋谷区）
• [Presentation] Evaluation of the Optical Polarization Properties in Semi-Polar {11-22} LEDs (2014)
  • Author(s): Y. Okamura, K. Nakao, N. Okada, K. Yamane, and K. Tadatomo
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LED4-12, Pacifico Yokohama
  • Place of Presentation: Pacifico Yokohama, (Yokohama, Japan)
• [Presentation] abrication of InGaN Based Light-Emitting Diode Using Freestanding {20-21} GaN Substrate (2014)
  • Author(s): Y. Denpo, Y. Mitsui, K. Yamane, N. Okada, and K. Tadatomo
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LED4-12, Pacifico Yokohama
  • Place of Presentation: Pacifico Yokohama, (Yokohama, Japan)
• [Presentation] Semipolar GaN substrate grown on patterned sapphire substrate by hydride vapor phase epitaxy (2013)
  • Author(s): K. Tadatomo, K. Yamane, N. Okada, H. Furuya, and Y. Hashimoto
  • Organizer: DPG Spring Meeting Deutschen Physikalischen Gesellschaft
  • Place of Presentation: Germany, Regensburg : Regensburug University
  • Year and Date: 2013-03-10
• [Presentation] Semipolar GaN Growth on Patterned Sapphire Substrate by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): K. Tadatomo, N. Okada, K. Yamane, H. Furuya, and Y. Hashimoto
  • Organizer: SPIE, Photonics West 2013 SPIE (the international society for optics and photonics) Paper
  • Place of Presentation: USA, California : Mscone Center
  • Year and Date: 2013-02-02
• [Presentation] 「非極性面LEDの現状と課題」固体光源分科会 (2013)
  • Author(s): 岡田成仁
  • Organizer: 視覚・色・光環境分科会公開研究会「照明用LEDの開発と応用の最新技術動向」
  • Place of Presentation: 日本大学理工学部,東京都
  • Year and Date: 2013-01-17
• [Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21}GaN on Patterned Sapphire Substrate (2013)
  • Author(s): Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: International Symposium on O+RC:R[19]Cptomechatronic Technologies 2013 (ISOT2013)
  • Place of Presentation: Ramada Plaza Jeju Hotel, Jeju Island, Korea(Invited oral Presentation)
  • Invited
• [Presentation] Advancement in Future Applications with III-Nitrides by Fusion Technology between Epitaxy and Processing (2013)
  • Author(s): K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
  • Organizer: International Workshop on Ultra-Precision Processing for III Nitride Semiconductor and Devices (WUPP for Nitride)
  • Place of Presentation: Santa Barbara, California, USA(Invited oral Presentation)
  • Invited
• [Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates (2013)
  • Author(s): N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, K. Tadatomo
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Kloster Seeon, Bavaria, Germany(Invited oral Presentation)
  • Invited
• [Presentation] Improvement on Flatness of GaN Layer and Utilization Efficiency of Ga Source by Flow Modulation on Hydride Vapor Phase Epitaxy (2013)
  • Author(s): K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Kloster Seeon, Bavaria, Germany(Invited oral Presentation)
  • Invited
• [Presentation] Progress in semipolar GaN on patterned sapphire substrates by HVPE (2013)
  • Author(s): N. Okada, K. Yamane, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University, Kyoto, Japan(Invited oral Presentation)(17p-M6-2)
• [Presentation] Characterization of structural defects in {20-21} GaN Layers on {22-43} Patterned Sapphire Substrates (2013)
  • Author(s): T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University, Kyoto, Japan(Oral presentation)(17p-M6-7)
• [Presentation] Analysis of Surface Potential of Various Oriented GaN layers via Kelvin Force Microscopy (2013)
  • Author(s): N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University, Kyoto, Japan(Poster presentation)(19p-PM4-19)
• [Presentation] Improvement in semipolar GaN substrate grown by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): Y. Hashimoto, H. Furuya, M. Ueno, M. Koyama, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University, Kyoto, Japan(Poster presentation)(16p-PM1-7)
• [Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application (2013)
  • Author(s): K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Oral presentation)(A6.05)
• [Presentation] Generation of Defects by Glide m-planes in Semipolar GaN Layers (2013)
  • Author(s): N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, H. T. Grahn
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(AP3.03)
• [Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(AP3.06)
• [Presentation] Reduction of Defects in Semipolar {11-22} GaN Using SiNx Intermediate layer by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(AP3.12)
• [Presentation] Improvement in Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer (2013)
  • Author(s): K. Nakao, K. Uchida, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(BP3.30)
• [Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates (2013)
  • Author(s): N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, and K. Tadatomo
  • Organizer: E-MRS 2013 SPRING MEETING
  • Place of Presentation: Congress Center - Strasbourg, Strasbourg, France(L P1-1)
• [Presentation] {11-22} Semipolar Light Emitting Diodes Using Relaxed Thick InGaN Layers with Various In Compositions and Thickness (2013)
  • Author(s): N. Okada, K. Uchida, K. Yamane, and K. Tadatomo
  • Organizer: E-MRS 2013 SPRING MEETING
  • Place of Presentation: Congress Center - Strasbourg, Strasbourg, France(L 1-3)
• [Presentation] サファイア加工基板を用いた{20-21} GaN成長における積層欠陥の抑制 (2013)
  • Author(s): 橋本健宏, 小山正和, 稲垣卓志, 山根啓輔, 岡田成仁, 只友一行
  • Organizer: 2013年第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学(京都府京田辺）
• [Presentation] InGaN下地層および正孔ブロッキング層を用いた半極性 {11-22} LEDの作製及び評価 (2013)
  • Author(s): 中尾洸太, Muhammad Haziq, 山根啓輔, 岡田成仁, 只友一行
  • Organizer: 2013年第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学(京都府京田辺）
• [Presentation] ハイドライド気相成長法による自立{20-21}GaN基板の作製とLED応用 (2013)
  • Author(s): 山根啓輔, 橋本健宏, 稲垣卓志, 岡田成仁, 只友一行
  • Organizer: 2013年第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学(京都府京田辺）
• [Presentation] HVPE成長したサファイア加工基板上厚膜 {20-21} GaNの積層欠陥の挙動 (2013)
  • Author(s): 稲垣卓志, 山根啓輔, 岡田成仁, 只友一行
  • Organizer: 2013年度応用物理・物理系学会中国四国支部合同学術講演会
  • Place of Presentation: 香川大学(香川県高松市）
• [Presentation] Analysis of surface potential of GaN layers by Kelvin Force Microscopy (2013)
  • Author(s): N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo
  • Organizer: 32nd Electronic Materials Symposium (EMS-32)
  • Place of Presentation: ラフォーレ琵琶湖（滋賀県守山市）
• [Presentation] サファイア加工基板上{20-21}GaNの積層欠陥の低減 (2013)
  • Author(s): 小山正和, 稲垣卓志, 橋本健宏, 山根啓輔, 岡田成仁, 只友一行
  • Organizer: ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学（大阪府吹田市）
• [Presentation] Characterization of structural defects in {20-21} GaN Layers on {22-43} Patterned Sapphire Substrates (2013)
  • Author(s): T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University（Kyoto Tanabe)
• [Presentation] Analysis of Surface Potential of Various Oriented GaN layers via Kelvin Force Microscopy (2013)
  • Author(s): N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University（Kyoto Tanabe)
• [Presentation] Improvement in semipolar GaN substrate grown by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): Y. Hashimoto, H. Furuya, M. Ueno, M. Koyama, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University（Kyoto Tanabe)
• [Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application (2013)
  • Author(s): K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington DC Metropolitan Area(USA)
• [Presentation] Generation of Defects by Glide m-planes in Semipolar GaN Layers (2013)
  • Author(s): N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, H. T. Grahn
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington DC Metropolitan Area(USA)
• [Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington DC Metropolitan Area(USA)
• [Presentation] Reduction of Defects in Semipolar {11-22} GaN Using SiNx Intermediate layer by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington DC Metropolitan Area(USA)
• [Presentation] Improvement in Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer (2013)
  • Author(s): K. Nakao, K. Uchida, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington DC Metropolitan Area(USA)
• [Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates (2013)
  • Author(s): N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, and K. Tadatomo
  • Organizer: E-MRS 2013 SPRING MEETING
  • Place of Presentation: Congress Center - Strasbourg(France)
• [Presentation] {11-22} Semipolar Light Emitting Diodes Using Relaxed Thick InGaN Layers with Various In Compositions and Thickness (2013)
  • Author(s): N. Okada, K. Uchida, K. Yamane, and K. Tadatomo
  • Organizer: E-MRS 2013 SPRING MEETING
  • Place of Presentation: Congress Center - Strasbourg(France)
• [Presentation] Transmission Electron Microscope Characterization on {20-21} GaN Layers on Patterned Sapphire Substrates (2013)
  • Author(s): T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
  • Organizer: The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2012)
  • Place of Presentation: New Taipei City(Taiwan)
• [Presentation] Advancement in Future Applications with III-Nitrides by Fusion Technology between Epitaxy and Processing (2013)
  • Author(s): K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
  • Organizer: International Workshop on Ultra-Precision Processing for III Nitride Semiconductor and Devices (WUPP for Nitride)
  • Place of Presentation: Santa Barbara(USA)
  • Invited
• [Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21}GaN on Patterned Sapphire Substrate (2013)
  • Author(s): Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
  • Organizer: International Symposium on Optomechatronic Technologies 2013 (ISOT2013)
  • Place of Presentation: Ramada Plaza Jeju Hotel, Jeju Island (Korea)
  • Invited
• [Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates (2013)
  • Author(s): N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, K. Tadatomo
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Kloster Seeon, Bavaria(Germany)
  • Invited
• [Presentation] Improvement on Flatness of GaN Layer and Utilization Efficiency of Ga Source by Flow Modulation on Hydride Vapor Phase Epitaxy (2013)
  • Author(s): K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Kloster Seeon, Bavaria (Germany)
  • Invited
• [Presentation] Progress in semipolar GaN on patterned sapphire substrates by HVPE (2013)
  • Author(s): N. Okada, K. Yamane, K. Tadatomo
  • Organizer: JSAP-OSA Joint Symposia 2013
  • Place of Presentation: Doshisya University (Kyoto)
  • Invited
• [Presentation] 半極性面 {11-22} InGaN下地層を用いたLEDにおける下地層膜厚依存性 (2013)
  • Author(s): 中尾洸太，三好清太，内田健充，山根啓輔，岡田成仁，只友一行
  • Organizer: 平成25年春季第60回応用物理学会関係連合学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川）
• [Presentation] Growth of free standing Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy (2012)
  • Author(s): K. Tadatomo, N. Okada, K. Yamane, H. Furuya
  • Organizer: Intensive Discussion on Crystal Growth of Nitride Semiconductors
  • Place of Presentation: Sendai : Tohoku University
  • Year and Date: 2012-10-22
• [Presentation] ハイドライド気相成長による非極性面GaNの低転位化メカニズム (2012)
  • Author(s): 岡田成仁,上野元久,内田健充,古家大士,山根啓輔,只友一行
  • Organizer: 平成24年秋季第73回応用物理学会関係連合学術講演会
  • Place of Presentation: 愛媛大学,愛媛県(12p-H9-8)
  • Year and Date: 2012-09-12
• [Presentation] Growth of Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy (2012)
  • Author(s): K. Tadatomo, N. Okada, K. Yamane, H. Furuya
  • Organizer: 2012 German-Japan-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
  • Place of Presentation: Germany, Berlin:Japanese-German Center Berlin
  • Year and Date: 2012-07-21
• [Presentation] ハイドライド気相成長法による非極性面GaNの厚膜成長 (2012)
  • Author(s): 只友一行,岡田成仁,山根啓輔
  • Organizer: 第137回結晶工学分科会研究会
  • Place of Presentation: 京都テルサ,京都
  • Year and Date: 2012-06-15
• [Presentation] Improvement in performance of light-emitting diodes fabricated on semipolar {11-22} GaN template using thick InGaN layers (2012)
  • Author(s): N. Okada, M. Haziq, Y. Hirota, K. Uchida, Y. Fukuda, S. Miyoshi, K. Yamane, and K. Tadatomo
  • Organizer: International Symposium on Semiconductor Light Emitting Devices 2012
  • Place of Presentation: Berlin （Germany）
• [Presentation] 緩和した半極性面 {11-22} InGaN上へのLEDの作製 (2012)
  • Author(s): 内田健充，三好清太，山根啓輔，岡田成仁，只友一行
  • Organizer: 平成24年秋季第73回応用物理学会関係連合学術講演会
  • Place of Presentation: 愛媛大学（愛媛）
• [Presentation] Transmission Electron Microscope Characterization on {20-21} GaN Layers on Patterned Sapphire Substrates
  • Author(s): T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
  • Organizer: The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2012)
  • Place of Presentation: Fullon Hotel Danshuei Fishermen's Wharf, Tamsui, New Taipei City, Taiwan(Oral presentation)
• [Remarks]
  • URL: http://device.eee.yamaguchi-u.ac.jp/
• [Remarks] 只友研究室
  • URL: http://device.eee.yamaguchi-u.ac.jp/
• [Patent(Industrial Property Rights)] 自立基板の製造方法 (2013)
  • Inventor(s): 古家大士,東正信,只友一行,岡田成仁,山根啓輔
  • Industrial Property Rights Holder: 国立大学法人山口大学
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-02-26
  • Overseas
• [Patent(Industrial Property Rights)] 半導体装置の製造方法 (2013)
  • Inventor(s): 古家大士,東正信,只友一行,岡田成仁,山根啓輔
  • Industrial Property Rights Holder: 国立大学法人山口大学
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-02-26
  • Overseas
• [Patent(Industrial Property Rights)] 窒化ガリウム結晶自立基板およびその製造方法 (2013)
  • Inventor(s): 古家大士,東正信,只友一行,岡田成仁,山根啓輔
  • Industrial Property Rights Holder: 国立大学法人山口大学
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-03-13
  • Overseas