Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template
| Project/Area Number |
24760012
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Yamaguchi University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 発光ダイオード / 窒化ガリウムインジウムテンプレート / 偏光特性 / LED / 非極性面 / InGaN / 高効率化 / seimpolar / Nitiride / InGaN underlying layer |
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| Research Abstract |
This research project aims to fabricate and evaluate light-emitting diodes (LEDs) grown on a semipolar InGaN template enabling to realize state-of-the-art LED. Efficiency of a liquid crystal display using LEDs and laser diodes (LDs) can be improved by controlling light-polarization characteristics; it was revealed that the semipolar InGaN templates can control the light-polarization for the LEDs and LDs. Although LEDs recently have a problem of efficiency droop at a high-injection current, InGaN template is also effective to enhance the light output power of LED. The light output power of the LED fabricated on the InGaN template is approximately 6 times higher than that of a conventional LED at a high injection current.
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Report
(3 results)
Research Products
(74 results)
