Nitrogen impurity states in AlAs for visible quantum light sources
| Project/Area Number |
24760015
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The Institute of Physical and Chemical Research (2013-2014)
National Institute for Materials Science (2012) |
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Principal Investigator |
JO Masafumi 独立行政法人理化学研究所, 平山量子光素子研究室, 研究員 (20400020)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 量子光源 / アルミニウム砒素 / 窒素 / 等電子中心 / 歪分布 / 間接遷移 / 直接遷移 / AlGaAs / 電子状態 / 単一光子発生 / AlAs |
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| Outline of Final Research Achievements |
This work demonstrated the single photon emission from a single nitrogen impurity center in AlAs. The results allow for realizing visible quantum light sources on GaAs substrates. Theoretical calculation revealed the emission originating from nitrogen pairs in the nearest neighbor configuration. The nitrogen doped AlGaAs provided intense luminescence in the wavelength range from visible to near infrared.
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Report
(4 results)
Research Products
(5 results)
