the appearance of surface magnetism beta-FeSi2

• Project/Area Number: 24760022
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Ibaraki University
• Principal Investigator: NAGANO Takatoshi 茨城大学, 工学部, 講師 (70343621)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: 偏析 / β-FeSi2 / 第一原理計算

Research Abstract

We study the atomic and electric structure on the (101) and (100) surface of beta-FeSi2 by ab-initio calculation using the projector augmented wave method (PAW). The cohesive energy calculated with the slab model show that the structure Si layer biased in the surface is stable. The simulated STM images indicate that the charge in the neighborhood of Fermi level concentrated on Fe-Si bonding.Also, Ru films formed by this new process have (002) preferred orientation and Cu (111) was formed by plating. This result corresponded to the tendency predicted by ab initio calculations.

Research Products

• [Journal Article] Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu Interconnect (2013)
  • Author(s): 永野隆敏、篠嶋妥
  • Journal Title: ECS Electrochemistry Letters Volume: 2巻
  • Peer Reviewed
• [Journal Article] Cs-Corrected STEM Observation and Atomic Modeling of Grain Boudary Impurities of Very Narrow Cu Interconnect (2013)
  • Author(s): Takatoshi Nagano,Kunihiro Tamahashi, Yasushi Sasajima, Jin Onuki
  • Journal Title: ECS Electrochemistry Letters Volume: 2 Issue: 6 Pages: H23-H25
  • DOI: 10.1149/2.001306eel
  • Peer Reviewed
• [Journal Article] Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu Interconnect (2013)
  • Author(s): Takatoshi Naganoz, Kunihiro Tamahashi, Yasushi Sasajima and Jin Onuki
  • Journal Title: ECS Electrochemistry Letters Volume: 2
  • Peer Reviewed
• [Journal Article] Effect of Point Defects on Lattice Constant in MgO Thin Film Deposited on Silicon (001) Substrate (2012)
  • Author(s): 金子智、永野隆敏
  • Journal Title: European Physical Journal - Applied Physics Volume: 58巻 Pages: 10302-10302
  • Peer Reviewed
• [Presentation] 微細Cu 配線における粒界偏析元素の直接観察と第一原理計算 (2012)
  • Author(s): 永野隆敏, 圓谷哲紀,江口大貴,篠嶋妥
  • Organizer: 日本金属学会2012年秋期大会
  • Place of Presentation: 愛媛大学城北キャンパス
  • Year and Date: 2012-09-19
• [Presentation] 超微細配線中のCu 粒成長に及ぼす不純物元素の影響 (2012)
  • Author(s): 江口大貴,永野隆敏, 圓谷哲紀,篠嶋妥
  • Organizer: 日本金属学会2012年秋期大会
  • Place of Presentation: 愛媛大学城北キャンパス
  • Year and Date: 2012-09-19
• [Presentation] Cu薄膜の粒成長に及ぼす基板の影響 (2012)
  • Author(s): 圓谷哲紀,江口大貴,永野隆敏,篠嶋妥
  • Organizer: 日本金属学会2012年秋期大会
  • Place of Presentation: 愛媛大学城北キャンパス
  • Year and Date: 2012-09-19
• [Presentation] a-SiGe/SiGe 粒界上偏析構造の第一原理計算 (2012)
  • Author(s): 圖師優磨, 山田翔世, 永野隆敏
  • Organizer: 第73回応用物理学会学術講演
  • Place of Presentation: 松山大学文京キャンパス
  • Year and Date: 2012-09-13
• [Presentation] a-SiGe/SiGe 粒界上偏析構造の第一原理計算 (2012)
  • Author(s): 山田翔世, 圖師優磨, 永野隆敏
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、早稲田キャンパス
  • Year and Date: 2012-03-16
• [Presentation] アモルファスSiGe/SiGe粒界上偏析構造の第一原理計算
  • Author(s): 永野隆敏
  • Organizer: 応用物理学会 シリサイド系半導体と関連物質研究会
  • Place of Presentation: 愛媛県松山市民会館
  • Invited