| Project/Area Number |
24760033
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
OHTOMO MANABU 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 先端基礎研究センター, 博士研究員 (20610299)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | スピン偏極ヘリウム脱励起分光法 / 六方晶窒化ホウ素 / グラフェン / スピントロニクス / 磁性 / 準安定原子線 / 準安定原子 / スピン偏極準安定ヘリウム脱励起分光 / 表面科学 |
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| Research Abstract |
The hexagonal boron nitride (h-BN) is a promising spin-injection barrier material for graphene spintronics. In this study, the spin-polarized metastable de-excitation spectroscopy (SPMDS) was employed to elucidate the spin-dependent electronic states induced at the h-BN/magnetic metal interfaces which have considerable effects on the spin injection efficiency.
The extreme surface sensitivity of the method enabled us to prove the orbital mixing and in-gap states formation on h-BN monolayer independently from strong signals from magnetic metals (Ni and Co). It was revealed that the in-gap states are spin-polarized parallel to the majority spins of Ni and Co. This result is essential for understanding the sign and magnitude of magnetoresistance of spintronics devices with h-BN tunnel barriers.
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