| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Research Abstract |
The purpose of this study is studying and controlling the photoluminescence phenomena of quantum dots or wells, which has expected for the applications of electro-optic devices. The excitation density dependence of photoluminescence (PL) blinking of single CdSe/ZnS quantum dots indicates that the biexciton generation is a precursor of the trion state and not of the OFF state. Also, the THz electric field dependence and the relaxation dynamics of the PL flash intensity of GaAs quantum wells suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
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