High efficiency mirror-like surface grinding of SiC by UV-ray assisted grinding
| Project/Area Number |
24760105
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
YAMAGUCHI Keishi 京都工芸繊維大学, 工芸科学研究科, 助教 (00609282)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | SiC / スクラッチ試験 / 紫外光 / 延性モード / フォースプレート / UVアシスト |
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| Outline of Final Research Achievements |
Ultraviolet-ray (UV-ray) assisted grinding was proposed to the high-efficiency mirror like surface grinding of SiC. In this study, the machining characteristics of SiC was clarified by the gradually increase cutting experiment (scratch test). As the result, the critical cutting depth of ductile mode cutting increased with the oxide formation on SiC surface caused by UV-ray irradiation. Moreover, the thickness of the oxide was increased exponentially by heating with UV-ray irradiation and it is clarified that the critical cutting depth of SiC was also increased.
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Report
(4 results)
Research Products
(2 results)
