High efficiency mirror-like surface grinding of SiC by UV-ray assisted grinding

Research Project

Project/Area Number	24760105
Research Category	Grant-in-Aid for Young Scientists (B)
Allocation Type	Multi-year Fund
Research Field	Production engineering/Processing studies
Research Institution	Kyoto Institute of Technology
Principal Investigator	YAMAGUCHI Keishi 京都工芸繊維大学, 工芸科学研究科, 助教 (00609282)
Project Period (FY)	2012-04-01 – 2015-03-31
Project Status	Completed (Fiscal Year 2014)
Budget Amount *help	¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000) Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000) Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000) Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords	SiC / スクラッチ試験 / 紫外光 / 延性モード / フォースプレート / UVアシスト
Outline of Final Research Achievements	Ultraviolet-ray (UV-ray) assisted grinding was proposed to the high-efficiency mirror like surface grinding of SiC. In this study, the machining characteristics of SiC was clarified by the gradually increase cutting experiment (scratch test). As the result, the critical cutting depth of ductile mode cutting increased with the oxide formation on SiC surface caused by UV-ray irradiation. Moreover, the thickness of the oxide was increased exponentially by heating with UV-ray irradiation and it is clarified that the critical cutting depth of SiC was also increased.

Report

(4 results)