| Project/Area Number |
24760110
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kinki University (2014)
Ritsumeikan University (2012-2013) |
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Principal Investigator |
MURATA Junji 近畿大学, 理工学部, 講師 (70531474)
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| Research Collaborator |
HATTORI Azusa 大阪大学, 産業科学研究所, 助教
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 窒化ガリウム / 研磨加工 / 触媒 / エッチング / 研磨 / 平坦化 / 発光特性 / 精密研磨 |
|---|
| Outline of Final Research Achievements |
In this research, a novel abrasive-free polishing process for GaN surface utilizing a chemical etching with catalyst has been developed to obtain damage-free and super-smooth GaN surfaces with a high removal efficiency. Atomically-smooth surface can be achieved over an entire wafer (2 inch in diameter) surface by the proposed method. The polishing duration to obtain a flat GaN surface were reduced from several tens of hours to approximately 60 min compared with a conventional polishing method. The processed GaN surface showed a superior crystallographic, luminescence and electrical properties to that processed by a mechanical polishing.
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