| Project/Area Number |
24760246
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
SHIMIZU Yasuo 東北大学, 金属材料研究所, 助教 (40581963)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 電子・電気材料 / ナノ材料 / ３次元アトムプローブ / 複合クラスター / 同位体 |
|---|
| Research Abstract |
Coimplantation of heterogeneous dopants into semiconductors for shallow junction formation has recently been attracting much attention for realizing continuous shrinkage of large-scale integration. In this study, the behavior of coimplanted carbon and boron atoms in silicon substrates is investigated. The carbon-boron coclusters formed by annealing were directly observed by three-dimensional atom probe. In combination with carrier concentration profiles obtained by spreading resistance measurements, it is found that the carbon coimplantation leads to the decrease of boron electrical activation, whereas boron diffusion is suppressed by the presence of carbon atoms. For calibrating the three-dimensional reconstructed images obtained by the atom probe, isotopic multilayer samples fabricated via atomic-layer deposition were employed.
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