| Project/Area Number |
24760247
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | グラフェン / ダイヤモンドライクカーボン (DLC) / 電界効果トランジスタ / 電界効果トランジスタ (FET) / 光電子制御プラズマCVD (PA-PECVD) / ダイヤモンドライクカーボン |
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| Research Abstract |
Graphene exhibits an ultra-high carrier mobility that is far superior to the values of current semiconductors for electronics such as silicon. Thus graphene is an attractive material to break the limit of scaling-down of current silicon-based electronic devices. However, it is impossible for graphene to apply its field-effect transistor (FET) structure with oxide dielectrics like silicon dioxide because of the oxidation damage.
In this project, the representative tried to deposit a diamond-like carbon (DLC), which is also a carbonaceous material, on graphene by using the "photoemission-assisted plasma-enhanced chemical vapor deposition" method and finally fabricated a graphene FET with a DLC gate dielectric. The FET exhibits a high transconductance value comparable to the values of other FET's with dielectrics having high dielectric constants like hafnium oxide.
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