Fabrication of an innovative electronic device with carbonaceous materials
Project/Area Number |
24760247
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | Tohoku University |
Principal Investigator |
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Project Period (FY) |
2012-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
|
Keywords | グラフェン / ダイヤモンドライクカーボン (DLC) / 電界効果トランジスタ / 電界効果トランジスタ (FET) / 光電子制御プラズマCVD (PA-PECVD) / ダイヤモンドライクカーボン |
Research Abstract |
Graphene exhibits an ultra-high carrier mobility that is far superior to the values of current semiconductors for electronics such as silicon. Thus graphene is an attractive material to break the limit of scaling-down of current silicon-based electronic devices. However, it is impossible for graphene to apply its field-effect transistor (FET) structure with oxide dielectrics like silicon dioxide because of the oxidation damage. In this project, the representative tried to deposit a diamond-like carbon (DLC), which is also a carbonaceous material, on graphene by using the "photoemission-assisted plasma-enhanced chemical vapor deposition" method and finally fabricated a graphene FET with a DLC gate dielectric. The FET exhibits a high transconductance value comparable to the values of other FET's with dielectrics having high dielectric constants like hafnium oxide.
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Report
(3 results)
Research Products
(33 results)
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[Presentation] Formation of a δ-Doped Diamond-Like Carbon Film with a Modulation-doped Gate Dielectric Structure2013
Author(s)
Susumu Takabayashi, Hiroyuki Hayashi, Meng Yang, Radek Jesko, Rie Shishido, Shuichi Ogawa, Taiichi Otsuji, Yuji Takakuwa
Organizer
12th. International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)
Place of Presentation
Tsukuba International Congress Center, Tsukuba, Japan
Related Report
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[Presentation] Thermal Stability of Thick DLC Dielectric Films for Graphene-Channel THz Laser Prepared by Photoemission-Assisted Plasma-Enhanced CVD2013
Author(s)
Radek Jesko, Hiroyuki Hayashi, Shuichi Ogawa, Susumu Takabayashi, Takanori Etoh, Yuki Kurita, Taiichi Otsuji, Yuji Takakuwa
Organizer
12th. International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)
Place of Presentation
Tsukuba International Congress Center, Tsukuba, Japan
Related Report
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[Presentation] Deposition of thick dielectric films of diamond-like carbon for graphene-channel THz laser by photoemission-assisted plasma-enhanced CVD2013
Author(s)
Radek Jesko, Meng Yang, Hiroyuki, Hayashi, Shuichi. Ogawa, Susumu Takabayashi, Takanori Etou, Yuki Kurita, Taiichi Otsuji, Yuji Takakuwa
Organizer
The 12th. International Symposium on Sputtering & Plasma Processes (ISSP2013)
Place of Presentation
Kyoto Research Park, Kyoto, Japan
Related Report
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