| Project/Area Number |
24760248
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
GOTO Tetsuya 東北大学, 未来科学技術共同研究センター, 准教授 (00359556)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 薄膜トランジスタ / IGZO / マグネトロンスパッタ / キセノン |
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| Research Abstract |
Oxide-semiconductor amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) were fabricated using the rotation magnet sputtering technology which can realize uniform deposition and plasma irradiation at the substrate due to time averaging effect of moving multiple plasma loops excited on the target surface. Thanks to these merits, uniformity of film properties, the properties of carrier life-time which is related to the carrier mobility measured by microwave photo conductive decay method, can be improved. Also, it is revealed that carrier mobility can be increased by introducing the xenon sputtering instead of the conventional argon sputtering. We also proposed the xenon sputtering by rotation magnet sputtering incorporating a xenon recycle-and-supply system, where a-IGZO TFTs with high mobility with uniform distribution can be fabricated with low-cost even by using high-cost xenon.
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