Intrinsic pinning in in-plane magnetized film

• Project/Area Number: 24760249
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: YAMANOUCHI Michihiko 東北大学, 電気通信研究所, 助教 (40590899)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: 電流誘起磁壁移動

Research Abstract

To determine the intrinsic pinning and extrinsic pinning dependences of threshold current for the current-induced domain wall motion in in-plane magnetized films, fabrication method of stacking structure and device structure was studied. I proposed a fabrication method of films realizing that the extrinsic pinning is weaker than the intrinsic pinning and device structure to prepare a domain wall in in-plane magnetized wire by using Oersted field. An in-plane magnetized wire having an Oersted field line to create a domain wall was fabricated.