Spatio-time-resolved cathodoluminescence measurement for wide bandgap nitride semiconductors
| Project/Area Number |
24760250
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
HAZU Kouji 東北大学, 多元物質科学研究所, 助教 (30367057)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 光物性 / 時空間同時分解カソードルミネッセンス計測 |
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| Research Abstract |
Local carrier dynamics in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron emission efficiency of the front-excitation-type photoelectron-gun enabled to investigate sub-surface defect structures with low acceleration voltages. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries.
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Report
(3 results)
Research Products
(13 results)
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[Presentation]2012
Author(s)
K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
Organizer
International Workshop on Nitride Semiconductors 2012 (IWN2012)
Place of Presentation
Sapporo, Japan, ( No. MoP-GR-54)
Related Report
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