Spatio-time-resolved cathodoluminescence measurement for wide bandgap nitride semiconductors

• Project/Area Number: 24760250
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: HAZU Kouji 東北大学, 多元物質科学研究所, 助教 (30367057)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2012: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 光物性 / 時空間同時分解カソードルミネッセンス計測

Research Abstract

Local carrier dynamics in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron emission efficiency of the front-excitation-type photoelectron-gun enabled to investigate sub-surface defect structures with low acceleration voltages. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries.

Research Products

• [Journal Article] Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-exciitation-type photoelectron gun (2013)
  • Author(s): K. Furusawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu
  • Journal Title: Applied Physics Letters Volume: vol. 8 Pages: 0421081-4
• [Journal Article] Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun (2013)
  • Author(s): K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 5 Pages: 0521081-4
  • DOI: 10.1063/1.4817297
  • Peer Reviewed
• [Journal Article] Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence (2012)
  • Author(s): Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and S. F. Chichibu
  • Journal Title: Applied Physics Letters Volume: vol.101 Pages: 2121061-4
• [Presentation] 高輝度表面入射型パルス電子銃を搭載した時間空間分解カソードルミネッセンス装置によるHVPE成長GaN基板の評価 (2013)
  • Author(s): 石川陽一,古澤健太郎,田代公則,羽豆耕治,長尾哲,池田宏隆,藤戸健史,秩父重英
  • Organizer: 第60回応用物理学会春季学術講演会(30p-G21-3)
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-30
• [Presentation] 高輝度表面入射型パルス電子銃を搭載した時間空間分解カソードルミネッセンス装置によるHVPE成長GaN基板の評価 (2013)
  • Author(s): 石川陽一,古澤健太郎,田代公則,羽豆耕治,長尾哲,池田宏隆,藤戸健史,秩父重英
  • Organizer: 2013年春季応用物理学会
  • Place of Presentation: 神奈川県
• [Presentation] 表面入射型パルス光電子銃を搭載した時間空間分解カソードルミネッセンス装置によるワイドバンドギャップ半導体の評価 (2012)
  • Author(s): 古澤健太郎,石川陽一,田代公則,羽豆耕治,秩父重英
  • Organizer: 第73回応用物理学会学術講演会(12p-H10-21)
  • Place of Presentation: 愛媛大学・松山大学
  • Year and Date: 2012-09-12
• [Presentation] m面GaN基板上にNH_3-MBE成長したAl_<0.2>5Ga_0.75Nの時間空間分解CL評価-GaN基板のチルトモゼイクが発光特性に及ぼす影響- (2012)
  • Author(s): 秩父重英,羽豆耕治,石川陽一,田代公則,古澤健太郎,長尾哲,藤戸健史
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学, (12p-H10-22)
  • Year and Date: 2012-09-12
• [Presentation] 六方晶BN微結晶の時間・空間分解カソードルミネッセンス評価 (2012)
  • Author(s): 石川陽一,田代公則,羽豆耕治,古澤健太郎,小南裕子,原和彦,秩父重英
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学, (12p-H10-23)
  • Year and Date: 2012-09-12
• [Presentation] (2012)
  • Author(s): K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo, Japan, ( No. MoP-GR-54)
• [Presentation] 表面入射型パルス光電子銃を搭載した時間空間分解カソードルミネッセンス装置によるワイドバンドギャップ半導体の評価 (2012)
  • Author(s): 古澤健太郎,石川陽一,田代公則,羽豆耕治,秩父重英
  • Organizer: 2012年秋季応用物理学会
  • Place of Presentation: 愛媛県
• [Presentation] m面GaN基板上にNH3-MBE成長したAl0.25Ga0.75Nの時間空間分解CL評価 -GaN基板のチルトモゼイクが発光特性に及ぼす影響- (2012)
  • Author(s): 秩父重英,羽豆耕治,石川陽一,田代公則,古澤健太郎,長尾哲,藤戸健史
  • Organizer: 2012年秋季応用物理学会
  • Place of Presentation: 愛媛県
• [Presentation] 六方晶BN微結晶の時間・空間分解カソードルミネッセンス評価 (2012)
  • Author(s): 石川陽一,田代公則,羽豆耕治,古澤健太郎,小南裕子,原和彦,秩父重英
  • Organizer: 2012年秋季応用物理学会
  • Place of Presentation: 愛媛県
• [Presentation] Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique (2012)
  • Author(s): K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo, Japan