| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Research Abstract |
In this research project, a novel fabrication technology for III-nitride semiconductor nanostructures have been developed. The superiority of the new method was demonstrated by fabricating air-gap nitride microcavities. By utilizing the technology (thermal decomposition of GaN in H2/NH3 mixed gas), GaN can be selectively removed from GaN/AlGaN heterostructures leaving AlGaN thin films with air-gap layers. Fabricated air-gap vertical microcavities exhibited clear cavity modes with reasonably high Q factors even with a very small number of air/AlGaN distributed Bragg reflectors, which evidences the superiority of the newly developed method.
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