Development of novel buffer layers for heteroepitaxial growth of diamond
| Project/Area Number |
24760252
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | ダイヤモンド / ヘテロエピタキシャル成長 / バッファ層 / 合成 / 合金バッファ層 / パワーデバイス |
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| Research Abstract |
Development of novel buffer layers and diamond growth were performed for future low-loss diamond power devices. As novel buffer layers, CuNi alloy and fluorinated-graphene have been successfully synthesized. Diamond was grown on the CuNi alloy buffer layers by antenna-edge microwave plasma CVD. Compared with the diamond growth on Cu, a higher density of diamond crystals were obtained on the CuNi film. This is because carbon precursors could be easily desorbed from the Cu surface due to the weak interaction, while carbons have strong interaction with Ni and diamond can be nucleated on the CuNi alloy. Thus, the CuNi alloy buffer layer is more suitable for the diamond growth than on Cu.
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Report
(3 results)
Research Products
(29 results)
